GF6968A

GF6968A Common-Drain Dual N-Channel MOSFET CH RENFET T EN G TSSOP-8 0.122 (3.10) 0.114 (2.90) 8 5 0.177 (4.50) 0.170 (4.30) Low VGS(th) VDS 20V RDS(ON) 22mΩ ID 6.2A D 8 S2 7 S2 6 G2 5 ® uct Prod New 0.028 (0.70) 0.020 (0.50) 0.005 (0.127) 1 D 2 S1 3 S1 4 G1 0.260 (6.60) 0.244 (6.20) 1 4 0.260 (6.60) min. 0.028 (0.70) 0.020 (0.50) 0.204 (5.20) 0.025 (0.65) 0.012 (0.30) 0.010 (0.25) 0.047 (1.20) 0.041 (1.05) 0 °– 8 ° 0.012 (0.30) 0.010 (0.25) 0.025 (0.65) 0.006 (0.15) 0.002 (0.05) Dimensions in inches and (millimeters) Mounting Pad Layout Mechanical Data Case: TSSOP-8 Package Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li-ion battery packs use • Designed for battery-switch applications Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)(1) Pulsed Drain Current Maximum Power Dissipation(1) TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, Tstg RθJA Limit 20 ±12 6.2 30 1.5 0.96 –55 to 150 83 Unit V A A W °C °C/W 4/11/01 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. GF6968A Common-Drain Dual N-Channel MOSFET Electrical Characteristics (T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) J = 25°C unless otherwise noted) Symbol Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 12V, VDS = 0V VDS = 20V, VGS = 0V VDS ≥ 5V, VGS = 4.5V VGS = 4.5V, ID = 6.2A VGS = 2.5V, ID = 5.3A VDS = 10V, ID = 6.2A Min Typ Max Unit BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs 20 0.6 – – 30 – – – – – – – – 17.5 25 26.5 – – ±100 1 – 22 30 – V V nA µA A mΩ S Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 10V, VGS = 0V f = 1.0 MHz VDS = 10V, VGS = 4.5V ID = 6.2A VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V RG = 6Ω – – – – – – – – – – 14 2.2 3 11 15 43 22 1240 200 120 20 – – 30 50 100 50 – – – pF ns nC IS VSD — IS = 6.2A, VGS = 0V – – – 0.8 1.7 1.2 A V VDD ton toff tr 90% Switching Test Circuit VGEN RG VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT DUT 10% G 50% 50% S Input, VIN 10% PULSE WIDTH GF6968A Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves (T 30 3.5V 25 3.0V 20 2.5V 15 10 5 1.5V 0 0 1 2 3 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 2.0V A = 25°C unless otherwise noted) Fig. 1 – Output Characteristics 30 VGS = 4.5V Fig. 2 – Transfer Characteristics VDS = 10V 25 ID -- Drain Source Current (A) ID -- Drain Current (A) 20 15 TJ = 125°C 10 --55°C 25°C 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature 1.1 ID = 250µA 0.04 0.035 Fig. 4 – On-Resistance vs. Drain Current VGS(th) -- Threshold Voltage (V) 0.9 RDS(ON) -- On-Resistance (Ω) 0.03 VGS = 2.5V 0.025 0.7 0.02 0.015 VGS = 4.5V 0.01 0.5 0.3 --50 --25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = 4.5V ID = 6.2A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) GF6968A Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.08 ID = 6.2A 5 Fig. 7 – Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 10V ID = 6.2A 4 RDS(ON) -- On-Resistance (Ω) 0.06 3 0.04 TJ = 125°C 2 0.02 TJ = 25°C 0 1 2 3 4 5 1 0 0 2 4 6 8 10 12 14 16 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance 1800 f = 1MHZ VGS = 0V Ciss 1200 100 Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 1500 IS -- Source Current (A) C -- Capacitance (pF) 10 --55°C 1 TJ = 125°C 900 600 300 Crss 0 0 4 8 0.1 25°C Coss 0.01 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GF6968A Common-Drain Dual N-Channel MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature 33 ID = 250µA Fig. 11 – Transient Thermal Impedance BVDSS -- Breakdown Voltage (V) 32 31 30 29 28 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration 25 100 Fig. 13 – Maximum Safe Operating Area 10 0µ s 20 ID -- Drain Current (A) 10 10 1m 10 ms s 15 RDS(ON) Limit 1 10s 0.1 VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.1 1 DC 0m s 1s 10 5 0 0.01 0.1 1 10 100 0.01 10 100 VDS -- Drain-Source Voltage (V)