GFB75N03

GFB75N03 N-Channel Enhancement-Mode MOSFET NCHT t RE FE duc T EN Pro G New ® VDS 30V RDS(ON) 6.5mΩ ID 80A D TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min. D G 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) G PIN D S 0.575 (14.60) 0.625 (15.88) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.63 (17.02) 0.33 (8.38) Seating Plate -T0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.120 (3.05) 0.155 (3.94) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mounting Pad Layout Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.3g Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 20 80 240 69.4 27.8 –55 to 150 275 1.8 40 Unit V A W °C °C °C/W °C/W 5/1/01 Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance RθJA Notes: (1) Maximum DC current limited by the package (2) 1-in2 2oz. Cu PCB mounted GFB75N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance(1) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current (1) (1) J = 25°C unless otherwise noted) Symbol Test Condition VGS = 0V, ID = 250µA VGS = 10V, ID = 38A VGS = 4.5V, ID = 31A VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VDS ≥ 5V, VGS = 10V VDS = 15V, ID = 38A Min Typ Max Unit BVDSS RDS(on) VGS(th) IDSS IGSS ID(on) gfs 30 – – 1.0 – – 75 – – 5.8 8.5 – – – – 61 – 6.5 9.5 3.0 1.0 ±100 – – V mΩ V µA nA A S Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=15V, ID=38A, VGS=5V VDS = 15V, VGS = 10V ID = 38A – – – – – 32.5 63 11 11 13 16 94 38 3240 625 285 46 90 – – 26 29 132 57 – – – pF ns nC VDD = 15V, RL = 15Ω ID ≅ 1A, VGEN = 10V RG = 6Ω VDS = 15V, VGS = 0V f = 1.0MHZ – – – – – – Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% IS VSD – IS = 38A, VGS = 0V – – – 0.9 75 1.3 A V VDD ton toff tr 90% Switching Test Circuit VGEN RG VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT DUT 10% G 50% 50% S Input, VIN 10% PULSE WIDTH GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 100 10V 6.0V A = 25°C unless otherwise noted) Fig. 1 – Output Characteristics 4.5V 80 70 4.0V Fig. 2 – Transfer Characteristics VDS = 10V ID -- Drain Source Current (A) 80 5.0V 3.5V 60 ID -- Drain Source Current (A) 60 50 40 30 25°C 20 10 0 TJ = 125°C --55°C 40 3.0V 20 VGS = 2.5V 0 0 1 2 3 4 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature V(th) -- Gate-to-Source Threshold Voltage (V) 1.7 ID = 250µA 0.016 0.014 Fig. 4 – On-Resistance vs. Drain Current RDS(ON) -- On-Resistance (Ω) 1.5 1.3 1.1 0.012 0.01 VGS = 4.5V 0.008 0.006 0.004 0.002 0 VGS = 10V 0.9 0.7 0.5 --50 --25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 38A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.03 ID = 38A 10 Fig. 7 – Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 15V ID = 38A 8 RDS(ON) -- On-Resistance (Ω) 0.025 0.02 6 0.015 TJ = 125°C 4 0.01 0.005 25°C 2 0 2 4 6 8 10 0 0 10 20 30 40 50 60 70 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance 4000 3500 f = 1MHZ VGS = 0V Ciss 100 Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 10 2500 2000 1500 1000 Coss 500 0 Crss IS -- Source Current (A) C -- Capacitance (pF) 3000 1 TJ = 125°C 0.1 25°C --55°C 0.01 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature 41 40 39 1 Fig. 11 – Transient Thermal Impedance D = 0.5 RΘJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) ID = 250µA 0.2 PDM 0.1 0.1 0.05 Single Pulse t1 t2 1. Duty Cycle, D = t1/t2 2. RθJC (t) = RθJC(norm) *RθJC 3. RθJC = 1.8°C/W 4. TJ - TC = PDM * RθJC (t) 0.01 0.0001 0.001 0.01 0.1 1 10 38 37 36 35 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Pulse Duration (sec.) Fig. 12 – Power vs. Pulse Duration 1000 Single Pulse RθJA = 1.8°C/W TC = 25°C 1000 Fig. 13 – Maximum Safe Operating Area 800 ID -- Drain Current (A) 10 100 1m 10 m s 0µ s Power (W) 600 s 400 RDS(ON) Limit 10 VGS = 10V Single Pulse RθJC = 1.8°C/W TA = 25°C 1 0.1 1 100ms DC 200 0 0.0001 0.001 0.01 0.1 1 10 10 100 Pulse Duration (sec.) VDS -- Drain-Source Voltage (V)