LL101A

LL101A THRU LL101C Schottky Diodes MiniMELF FEATURES ♦ For general purpose applications. ♦ The LL101 series is a metal-on-silicon ∅ .063 (1.6) .055 (1.4) Cathode Mark .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. ♦ This diode is also available in the DO-35 case with type designation SD101A, B, C, and in the SOD-123 case with type designation SD101AW, SD101BW, SD101CW. Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Peak Inverse Voltage LL101A LL101B LL101C VRRM VRRM VRRM Ptot IFSM Tj TS Value 60 50 40 4001) 2 125 –55 to +150 Unit V V V mW A °C °C Power Dissipation (Infinite Heatsink) Max. Single Cycle Surge 10 µs Square Wave Junction Temperature Storage Temperature Range 1) Valid provided that electrodes are kept at ambient temperature. 4/98 LL101A THRU LL101C ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage at IR = 10 µA LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C V(BR)R V(BR)R V(BR)R IR IR IR VF VF VF VF VF VF Ctot Ctot Ctot trr Min. 60 50 40 – – – – – – – – – – – – – Typ. – – – – – – – – – – – – – – – – Max. – – – 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 1 Unit V V V nA nA nA V V V V V V pF pF pF ns Leakage Current at VR = 50 V at VR = 40 V at VR = 30 V Forward Voltage Drop at IF = 1 mA at IF = 15 mA Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA, recover to 0.1 IR RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C