LL4151

LL4151 Small Signal Diodes MiniMELF FEATURES ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in MiniMELF ∅ .063 (1.6) .055 (1.4) Cathode Mark case especially suited for automatic insertion. including the DO-35 case with the type designation 1N4151 and the SOD-123 case with the type designation 1N4151W. ♦ This diode is also available in other case styles .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Forward DC current at Tamb = 25 °C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 50 75 2001) 1501) Unit V V mA mA VR VRM IF I0 IFSM Ptot Tj TS 500 5001) 175 –65 to +175 mA mW °C °C Valid provided that electrodes are kept at ambient temperature. 4/98 LL4151 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = mA Leakage Current at VR = 50 V at VR = 50 V, Tj = 150 °C Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. – Typ. – Max. 1 Unit V VF IR IR Ctot – – – – – – 50 50 2 nA µA pF trr trr RthJA ηv – – – 0.45 – – – – 4 2 0.351) – ns ns K/mW – Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES LL4151 RATINGS AND CHARACTERISTIC CURVES LL4151