LL4448

LL4448 Small Signal Diodes MiniMELF FEATURES ♦ Silicon Epitaxial Planar Diode ♦ Fast switching diode in MiniMELF case ∅ .063 (1.6) .055 (1.4) especially suited for automatic insertion. styles including: the DO-35 case with the type designation 1N4448, the SOD-123 case with the type designation 1N4448W, and the SOT-23 case with the type designation IMBD4448. Cathode Mark ♦ This diode is also available in other case .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR VRM I0 IFSM Ptot Tj TS 500 5001) 175 –65 to +175 mA mW °C °C Valid provided that electrodes are kept at ambient temperature. 4/98 LL4448 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 5 mA at IF = 100 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 °C Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. 0.62 – – – – – – – 0.45 Typ. – – – – – – – – – Max. 0.72 1 25 5 50 4 4 0.351) – Unit V V nA µA µA pF ns K/mW – VF VF IR IR IR Ctot trr RthJA ηv Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES LL4448 RATINGS AND CHARACTERISTIC CURVES LL4448