MMBT2907A

MMBT2907A Small Signal Transistor (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View uct d Pro New Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) 0.079 (2.0) .045 (1.15) .037 (0.95) 0.035 (0.9) 0.031 (0.8) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions Dimensions in in inches and (millimeters) inches and (millimeters) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 2F Packaging Codes/Options: E8/10K per 13” reel (8mm tape) E9/3K per 7” reel (8mm tape) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A. Maximum Ratings & Thermal Characteristics Parameters Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation(1) Power Dissipation(2) TA = 25°C Derate above 25°C TA = 25°C Derate above 25°C FR-5 Board Alumina Substrate Ratings at 25°C ambient temperature unless otherwise specified. Symbols -VCEO -VCBO -VEBO -IC Ptot Ptot RΘJA Tj TS Value 60 60 5.0 600 225 1.8 300 2.4 556 417 150 – 55 to +150 Units V V V mA mW mW/°C mW mW/°C °C/W °C °C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Notes: (1) FR-5 Board = 1.0 x 0.75 x 0.062 in. (2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2/28/00 MMBT2907A Small Signal Transistor (PNP) Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition -VCE = 10 V, -IC = 0.1 mA -VCE = 10 V, -IC = 1 mA -VCE = 10 V, -IC = 10 mA -VCE = 10 V, -IC = 150 mA(1) -VCE = 10 V, -IC = 500 mA(1) -VEB = 0.5 V, -VCE = 30 V -VCB = 50 V, IE = 0 -VCB = 50 V,IE = 0,TA =125°C -VEB = 0.5 V, -VCE = 30 V -IC -IC -IC -IC Min 75 100 100 100 50 — — — — — — — — 60 60 5.0 200 — — Typ — — — — — — — — — — — — — — — — — — — Max — — — 300 — 50 0.01 10 50 0.4 1.6 1.3 2.6 — — — — 8 30 Unit DC Current Gain hFE — Collector Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Collector-Emitter Breakdown Voltage(1) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Current Gain-Bandwidth Product Output Capacitance Input Capacitance Notes: (1) Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2.0% -ICEX -ICBO -IBL -VCEsat -VBEsat -V(BR)CEO -V(BR)CBO -V(BR)EBO fT Cobo Cibo nA µA nA V V V V V MHz pF pF = 150 mA, -IB = 15 mA = 500 mA, -IB = 50 mA = 150 mA, -IB = 15 mA = 500 mA, -IB = 50 mA -IC -IC -IE = 10 mA, IB = 0 = 10 µA, IE = 0 = 10 µA, IC = 0 -VCE = 20 V, -IC = 50 mA f = 100 MHz = 10 V, f = 1.0 MHz IE = 0 = 2.0 V, f = 1.0 MHz IC = 0 -VCB -VEB MMBT2907A Small Signal Transistor (PNP) Electrical Characteristics (T Parameter Turn-ON Time Delay Time Rise Time Turn-OFF Time Storage Time Fall Time J = 25°C unless otherwise noted) Symbol ton td tr toff ts tf Test Condition -IB1 = 15 mA, -IC = 150 mA -VCC = 30 V -IB1 = 15 mA, -IC = 150 mA -VCC = 30 V -IB1 = 15 mA, -IC = 150 mA, -VCC = 30 V -IB1 = 15 mA, -IC = 150 mA -VCC = 6.0 V -IB1 = -IB2 = 15 mA, -IC = 150 mA , -VCC = 6.0 V -IB1 = -IB2 = 15 mA, -IC = 150 mA , -VCC = 6 V Min — — — — — — Typ — — — — — — Max 45 10 40 100 80 30 Unit ns ns ns ns ns ns Switching Time Equivalent Test Circuit Figure 1 - Delay and Rise Time Test Circuit -30V INPUT Zo = 50 Ω PRF = 150 PPS Rise Time ≤ 2.0 ns P.W. < 200 ns 0 -16 V 200ns 200 Ω INPUT Zo = 50 Ω PRF = 150 PPS Rise Time ≤ 2.0 ns P.W. < 200 ns 0 -30 V 200ns 50 Ω Figure 2 - Storage and Fall Time Test Circuit +15 V 1.0 k Ω 1.0 k Ω To Oscilloscope with Rise Time ≤ 5.0 ns -6.0 V 37 Ω 1.0 k Ω To Oscilloscope with Rise Time ≤ 5.0 ns 50 Ω