MMBT3904

NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBT3904 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ¨ As complementary type, the PNP transistor MMBT3906 is recommended. ¨ This transistor is also available in the TO-92 case with the type designation 2N3904. .045 (1.15) .037 (0.95) Top View 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 1AM Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 ¡C VCBO VCEO VEBO IC Ptot 60 40 6.0 200 225 (1) 300 (2) V V V mA mW Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range NOTES: (1) Device on fiberglass substrate, see layout. (2) Device on alumina substrate. RqSB RqJA Tj TS 320 (1) 450 (1) 150 Ð65 to +150 ¡C/W ¡C/W ¡C ¡C 1/5/99 MMBT3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 Collector Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Collector-Emitter Cutoff Current VEB = 3 V, VCE = 30 V Emitter-Base Cutoff Current VEB = 3 V, VCE = 30 V DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Gain-Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V, f = 100 kHz Emitter-Base Capacitance at VEB = 0.5 V, f = 100 kHz V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat ICEV IEBV hFE hFE hFE hFE hFE hie fT CCBO CEBO 60 40 6.0 Ð Ð Ð Ð Ð Ð 40 70 100 60 30 1 300 Ð Ð Ð Ð Ð 0.2 0.3 0.85 0.95 50 50 Ð Ð 300 Ð Ð 10 Ð 4 8 V V V V V V V nA nA Ð Ð Ð Ð Ð kW MHz pF pF MMBT3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Voltage Feedback Ratio VCE = 10 V, IC = 1 mA, f = 1 kHz Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz Delay Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Rise Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Storage Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA Fall Time (see Fig. 2) at ÐIB1 = IB2 = 1 mA, IC = 10 mA hre 0.5 . 10Ð4 8 . 10Ð4 Ð hfe 100 400 Ð hoe 1 40 mS NF Ð 5 dB td Ð 35 ns tr Ð 35 ns ts Ð 200 ns tf Ð 50 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors 0.30 (7.5) 0.12 (3) Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.47 (12) 0.03 (0.8) 0.2 (5) Dimensions in inches and (millimeters) 0.06 (1.5) 0.20 (5.1)