MMBT3906

NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBT3906 SMALL SIGNAL TRANSISTORS (PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View ¨ As complementary type, the NPN transistor MMBT3904 is recommended. ¨ This transistor is also available in the TO-92 case with the type designation 2N3906. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 2A .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 ¡C ÐVCBO ÐVCEO ÐVEBO ÐIC Ptot 40 40 5.0 200 225 (1) 300 (2) V V V mA mW mW ¡C/W ¡C/W ¡C ¡C Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range NOTES: (1) Device on fiberglass subtrate, see layout (2) Device on alumina substrate RqSB RqJA Tj TS 320 (1) 450 (1) 150 Ð55 to +150 1/5/99 MMBT3906 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at ÐIC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at ÐIC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at ÐIE = 10 mA, IC = 0 Collector Saturation Voltage at ÐIC = 10 mA, ÐIB = 1 mA at ÐIC = 50 mA, ÐIB = 5 mA Base Saturation Voltage at ÐIC = 10 mA, ÐIB = 1 mA at ÐIC = 50 mA, ÐIB = 5 mA Collector-Emitter Cutoff Current at ÐVEB = 3 V, ÐVCE = 30 V Emitter-Base Cutoff Current at ÐVEB = 3 V, ÐVCE = 30 V DC Current Gain at ÐVCE = 1 V, ÐIC = at ÐVCE = 1 V, ÐIC = at ÐVCE = 1 V, ÐIC = at ÐVCE = 1 V, ÐIC = at ÐVCE = 1 V, ÐIC = 0.1 mA 1 mA 10 mA 50 mA 100 mA ÐV(BR)CBO ÐV(BR)CEO ÐV(BR)EBO ÐVCEsat ÐVCEsat ÐVBEsat ÐVBEsat ÐICEV ÐIEBV hFE hFE hFE hFE hFE hie fT CCBO CEBO 40 40 5 Ð Ð Ð Ð Ð Ð 60 80 100 60 30 1 250 Ð Ð Ð Ð Ð 0.25 0.4 0.85 0.95 50 50 Ð Ð 300 Ð Ð 10 Ð 4.5 10 V V V V V V V nA nA Ð Ð Ð Ð Ð kW MHz pF pF Input Impedance at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Gain-Bandwidth Product at ÐVCE = 20 V, ÐIC = 10 mA, f = 100 MHz Collector-Base Capacitance at ÐVCB = 5 V, f = 100 kHz Emitter-Base Capacitance at ÐVEB = 0.5 V, f = 100 kHz MMBT3906 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Voltage Feedback Ratio at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Small Signal Current Gain at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Output Admittance at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz Noise Figure at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW, f = 10 É 15 000 Hz Delay Time (see Fig. 1) at ÐIB1 = 1 mA, ÐIC = 10 mA Rise Time (see Fig. 1) at ÐIB1 = 1 mA, ÐIC = 10 mA Storage Time (see Fig. 2) at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA Fall Time (see Fig. 2) at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA hre 0.5 á 10Ð4 8 á 10Ð4 Ð hfe 100 400 Ð hoe 1 40 mS NF Ð 4 dB td Ð 35 ns tr Ð 35 ns ts Ð 225 ns tf Ð 75 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors 0.30 (7.5) 0.12 (3) Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.47 (12) 0.03 (0.8) 0.2 (5) Dimensions in inches and (millimeters) 0.06 (1.5) 0.20 (5.1)