MMBT4401

ADVANCED INFORMATION ADVANCED INFORMATION MMBT4401 SMALL SIGNAL TRANSISTORS (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES ¨ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View ¨ As complementary type, the PNP transistor MMBT4403 is recommended. ¨ This transistor is also available in the TO-92 case with the type designation 2N4401. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 2X .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation FR-5 Board,* TA=25°C Derate above 25°C Power Dissipation Alumina Substrate,** TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient FR-5 Board Alumina Substrate VCBO VCEO VEBO IC Ptot 60 40 6.0 600 225 1.8 300 2.4 556 417 150 Ð55 to +150 Volts Volts Volts mA mW mW/°C mW mW/°C °C/W ¡C ¡C Ptot RQJA Tj TS Junction Temperature Storage Temperature Range *FR-5 = 1.0 x 0.75 x 0.062 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2/18/99 MMBT4401 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Collector Cutoff Current at VEB = 0.4 V, VCE = 35 V Base Cutoff Current at VEB = 0.4 V, VCE = 35 V DC Current Gain at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 2 V, IC = 0.1 mA 1 mA 10 mA 150 mA(1) 500 mA(1) V(BR)CBO V(BR)CEO V(BR)EBO 60 40 6.0 Ð Ð Ð Volts Volts Volts VCEsat VCEsat VBEsat VBEsat ICEX IBEV Ð Ð 0.75 Ð Ð Ð 0.40 0.75 0.95 1.20 100 100 Volts Volts Volts Volts nA nA hFE hFE hFE hFE hFE hie hre fT CCBO CEBO 20 40 80 100 40 1 0.1 ¥ 10-4 250 Ð Ð Ð Ð Ð 300 Ð 15 8 ¥ 10-4 Ð 6.5 30 Ð Ð Ð Ð Ð kW Ð MHz pF pF Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Current Gain-Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V,f = 1 MHz, IE=0 Emitter-Base Capacitance at VEB = 0.5 V,f = 1 MHz, IC=0 NOTES: (1) Pulse test: pulse width ²300ms, cycle ² 2.0% MMBT4401 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz Delay Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA VCC = 30 V, VBE = 40 V Rise Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA VCC = 30 V, VBE = 40 V Storage Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA VCC = 30 V, IC = 150 mA Fall Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA VCC = 30 V, IC = 150 mA hfe hoe 40 1.0 500 30 Ð mS ns td Ð 15 tr Ð 20 ns ts Ð 225 ns tf Ð 30 ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME FIGURE 2 - TURN-OFF TIME 1.0 to 100 ms, DUTY CYCLE Å 2% +16 V 0 -2 V < 2 ns 1kW +30V 200W +16 V 0 C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope -14 V 1.0 to 100 ms, DUTY CYCLE Å 2% +30V 200W 1kW < 20 ns -4 V C S* < 10 pF