MMBT4403

ADVANCED INFORMATION ADVANCED INFORMATION MMBT4403 SMALL SIGNAL TRANSISTORS (PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES ¨ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View ¨ As complementary type, the NPN transistor MMBT4401 is recommended. ¨ This transistor is also available in the TO-92 case with the type designation 2N4403. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 2T .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation FR-5 Board,* TA=25°C Derate above 25°C Power Dissipation Alumina Substrate,** TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient FR-5 Board Alumina Substrate ÐVCBO ÐVCEO ÐVEBO ÐIC Ptot 40 40 5.0 600 225 1.8 300 2.4 556 417 150 Ð55 to +150 Volts Volts Volts mA mW mW/°C mW mW/°C °C/W ¡C ¡C Ptot RQJA Tj TS Junction Temperature Storage Temperature Range *FR-5 = 1.0 x 0.75 x 0.062 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2/17/99 MMBT4403 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at ÐIC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage at ÐIC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at ÐIE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage at ÐIC = 150 mA, ÐIB = 15 mA at ÐIC = 500 mA, ÐIB = 50 mA Base-Emitter Saturation Voltage(1) at ÐIC = 150 mA, ÐIB = 15 mA at ÐIC = 500 mA, ÐIB = 50 mA Collector-Emitter Cutoff Current at ÐVEB = 0.4 V, ÐVCE = 35 V Emitter-Base Cutoff Current at ÐVEB = 0.4 V, ÐVCE = 35 V DC Current Gain at ÐVCE = 1 V, ÐIC = at ÐVCE = 1 V, ÐIC = at ÐVCE = 1 V, ÐIC = at ÐVCE = 2 V, ÐIC = at ÐVCE = 2 V, ÐIC = 0.1 mA 1 mA 10 mA 150 mA 500 mA (1) (1) ÐV(BR)CBO ÐV(BR)CEO ÐV(BR)EBO ÐVCEsat ÐVCEsat ÐVBEsat ÐVBEsat ÐICEX ÐIBEV hFE hFE hFE hFE hFE hie fT CCBO CEBO 40 40 5.0 Ð Ð 0.75 Ð Ð Ð 30 60 100 100 20 1.5 200 Ð Ð Ð Ð Ð 0.40 0.75 0.95 1.30 100 100 Ð Ð Ð 300 Ð 15 Ð 8.5 30 Volts Volts Volts Volts Volts Volts Volts nA nA Ð Ð Ð Ð Ð kW MHz pF pF Input Impedance at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Current Gain-Bandwidth Product at ÐVCE = 10 V, ÐIC = 20 mA, f = 100 MHz Collector-Base Capacitance at ÐVCB = 10 V, IE = 0, f = 1 MHz Emitter-Base Capacitance at ÐVEB = 0.5 V, IC = 0, f = 1 MHz, NOTES: (1) Pulse test: pulse width ² 300m duty cycle ² 2% MMBT4403 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Voltage Feedback Ratio at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Small Signal Current Gain at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz Output Admittance at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz Delay Time at ÐIB1 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V, ÐVEB = 2 V Rise Time at ÐIB1 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V, ÐVEB = 2 V Storage Time at IB1 = ÐIB2 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V Fall Time at IB1 = ÐIB2 = 15 mA, ÐIC = 150 mA, ÐVCC = 30 V hre hfe hoe td tr ts tf 0.1 á 10Ð4 60 1.0 Ð Ð Ð Ð 8 á 10Ð4 500 100 15 20 225 30 Ð Ð mS ns ns ns ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME +30V 200W +16 V 0 -2 V < 2 ns 1kW C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope +16 V 0 -14 V < 20 ns -4 V 1kW C S* < 10 pF FIGURE 2 - TURN-OFF TIME +30V 200W 1.0 to 100 ms, DUTY CYCLE Å 2% 1.0 to 100 ms, DUTY CYCLE Å 2%