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MMBTA06

MMBTA06

  • 厂商:

    GE

  • 封装:

  • 描述:

    MMBTA06 - Small Signal Transistors (NPN) - General Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTA06 数据手册
NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 1 FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBTA56 is recommended. ♦ This transistor is also available in the TO-92 case with the type designation MPSA06. .045 (1.15) .037 (0.95) .102 (2.6) .094 (2.4) Top View .056 (1.43) .052 (1.33) 3 max. .004 (0.1) 2 .016 (0.4) .016 (0.4) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 1GM Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 °C VCBO VCEO VEBO IC Ptot 80 80 4.0 500 255(1) 300(2) V V V mA mW Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range 1)Device 2)Device RθJA Tj TS 5601) 150 –65 to +150 K/W °C °C on fiberglass substrate, see layout on alumina subtrate 10/23/98 MMBTA06 ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 100 µA, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, IB = 0 Collector-Base Cutoff Current VCB = 80 V, IE = 0 Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Base-Emitter On Voltage at IC = 10 mA, IB = 1 mA DC Current Gain at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 100 mA Gain-Bandwidth Product at VCE = 2 V, IC = 10 mA, f = 100 MHz V(BR)CEO V(BR)EBO ICES ICBO VCEsat VBE(on) hFE hFE fT 80 4.0 – – – – 100 100 100 – – 100 100 0.25 1.2 – – – V V nA nA V V – – MHz 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.47 (12) 0.03 (0.8) 0.2 (5) 0.06 (1.5) 0.20 (5.1)
MMBTA06
1. 物料型号: - 型号:MMBTA06 - 封装:SOT-23 - 描述:小信号晶体管(NPN型)

2. 器件简介: - MMBTA06是一款NPN型硅外延平面晶体管,适用于开关和放大应用。推荐使用PNP型互补晶体管MMBTA56。该晶体管也有TO-92封装,型号为MPS A06。

3. 引脚分配: - 引脚配置:1 = 基极(Base),2 = 发射极(Emitter),3 = 集电极(Collector)。

4. 参数特性: - 最大额定值和电特性在25°C环境温度下,除非另有说明。 - 集-基电压(VCBO):80V - 集-射电压(VCEO):80V - 发-基电压(VEBO):4.0V - 集电极电流(Ic):500mA - 热阻(ReJA):56°C/W(在玻璃纤维基板上) - 工作结温(Tj):150°C - 存储温度范围(Ts):-65至+150°C

5. 功能详解: - 电特性包括击穿电压、截止电流、饱和电压、开启电压和直流电流增益等参数。

6. 应用信息: - 适用于开关和放大应用。

7. 封装信息: - 封装类型:SOT-23塑料封装 - 重量:约0.008g - 标记代码:1GM
MMBTA06 价格&库存

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MMBTA06
  •  国内价格
  • 20+0.15501
  • 300+0.12111
  • 1200+0.10228
  • 3000+0.08939

库存:1585