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MMBTA56

MMBTA56

  • 厂商:

    GE

  • 封装:

  • 描述:

    MMBTA56 - Small Signal Transistors (PNP) - General Semiconductor

  • 数据手册
  • 价格&库存
MMBTA56 数据手册
NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors (PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 1 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View .056 (1.43) .052 (1.33) ♦ As complementary type, the NPN transistor MMBTA06 is recommended. ♦ This transistor is also available in the TO-92 case with the type designation MPSA56. 2 3 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) .045 (1.15) .037 (0.95) MECHANICAL DATA Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code 2GM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 °C –VCBO –VCEO –VEBO –IC Ptot 80 80 4.0 500 225(1) 300(2) V V V mA mW Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range 1) RθJA Tj TS 560(1) 150 – 55 to +150 K/W °C °C 2)Device Device on fiberglass subtrate, see layout on alumina substrate. 10/13/98 MMBTA56 ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Emitter Breakdown Voltage at -IC = 1 mA, IB = 0 mA Emitter-Base Breakdown Voltage at IE = 100 mA, IC = 0 Collector-Emitter Cutoff Current -VCE = 60 V, -IB = 0 Collector-Base Cutoff Current -VCB = 80 V, IE = 0 Collector Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base-Emitter On Voltage at -IC = 100 mA, -IB = 10 mA at -IC = 50 mA, -IB = 5 mA DC Current Gain at VCE = 1 V, -IC = 10 mA at VCE = 1 V, -IC = 100 mA Gain-Bandwidth Product at VCE = 1 V, IC = 100 mA, f = 100 MHz -VBR(CEO) -V(BR)EBO -ICES -ICBO -VCEsat -VBE(on) -VBE(on) hFE hFE fT 80 4.0 – – – – – 100 100 50 – – 100 100 0.25 1.2 1.2 – – – V V nA nA V V V – – MHz 0.30 (7.5) 0.12 (3) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.47 (12) 0.03 (0.8) 0.2 (5) 0.06 (1.5) 0.20 (5.1)
MMBTA56 价格&库存

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MMBTA56
  •  国内价格
  • 50+0.12481
  • 200+0.11701
  • 600+0.10921
  • 2000+0.10141
  • 5000+0.0936
  • 10000+0.08814

库存:1271

MMBTA56
    •  国内价格
    • 1+0.11017
    • 100+0.10283
    • 300+0.09549
    • 500+0.08814
    • 2000+0.08447
    • 5000+0.08226

    库存:0

    MMBTA56-7-F
    •  国内价格
    • 1+0.23611
    • 10+0.21727
    • 30+0.2135
    • 100+0.2022

    库存:185

    MMBTA56LT1G
    •  国内价格
    • 10+0.15769
    • 50+0.14587
    • 200+0.13601
    • 600+0.12616
    • 1500+0.11827
    • 3000+0.11334

    库存:1607

    MMBTA56-TP
    •  国内价格
    • 1+0.1425
    • 100+0.133
    • 300+0.1235
    • 500+0.114
    • 2000+0.10925
    • 5000+0.1064

    库存:2304

    SMMBTA56LT1G
    •  国内价格
    • 5+0.24328
    • 20+0.22181
    • 100+0.20034
    • 500+0.17888
    • 1000+0.16886
    • 2000+0.16171

    库存:0

    MMBTA56_R1_00001
    •  国内价格
    • 1+0.13206
    • 100+0.12276
    • 300+0.11346
    • 500+0.10416
    • 2000+0.09951
    • 5000+0.09672

    库存:560