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RS1B

RS1B

  • 厂商:

    GE

  • 封装:

  • 描述:

    RS1B - SURFACE MOUNT FAST SWITCHING RECTIFIER - General Semiconductor

  • 数据手册
  • 价格&库存
RS1B 数据手册
RS1A THRU RS1K SURFACE MOUNT FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 800 Volts DO-214AC MODIFIED J-BEND Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications in order to optimize board space ♦ Low profile package ♦ Built-in strain relief, ideal for automated placement ♦ Fast switching for high efficiency ♦ Glass passivated chip junction ♦ High temperature soldering: 250°C/10 seconds at terminals 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.090 (2.29) 0.078 (1.98) MECHANICAL DATA 0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93) 0.060 (1.52) 0.030 (0.76) Dimensions are in inches and (millimeters) Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.002 ounce, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS RS1A RS1B RB RS1D RD RS1G RG RS1J RJ RS1K RK UNITS Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=90°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL=90°C Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance Maximum thermal resistance TA=25°C TA=125°C (NOTE 1) (NOTE 2) (NOTE 3) RA VRRM VRMS VDC I(AV) 50 35 50 100 70 100 200 140 200 1.0 400 280 400 600 420 600 800 500 800 Volts Volts Volts Amp IFSM VF IR trr CJ RΘJA RΘJL TJ, TSTG 30.0 1.30 5.0 50.0 150 10.0 105.0 32.0 -55 to +150 250 7.0 Amps Volts µA ns pF °C/W °C Operating junction and storage temperature range NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas 4/98 RATINGS AND CHARACTERISTIC CURVES RS1A THRU RS1J FIG. 1 - FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, AMPERES FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1.2 AVERAGE FORWARD CURRENT, AMPERES RESISTIVE OR INDUCTIVE LOAD 50 40 30 20 10 0 1.0 TL = 90°C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0.5 0 0 P.C.B. MOUNTED ON 0.2 x 0.2” (5.0 x 5.0mm) COPPER PAD AREAS 20 40 60 80 100 120 140 160 180 1 10 NUMBER OF CYCLES AT 60 HZ 100 LEAD TEMPERATURE, °C FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 30 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 30 10 TJ=125°C INSTANTANEOUS FORWARD CURRENT, AMPERES 10 TJ=125°C 1 TJ=100°C 1 TJ=25°C 0.1 0.1 TJ=25°C 0.01 0 20 40 60 80 100 PULSE WIDTH=300µs 1% DUTY CYCLE PERCENT OF RATED PEAK REVERSE VOLTAGE, % 0.01 0.4 0.6 0.8 1 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TRANSIENT THERMAL IMPEDANCE (°C/W) FIG. 5 - TYPICAL JUNCTION CAPACITANCE FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE 30 JUNCTION CAPACITANCE, pF TJ=25°C f=1.0 MHZ Vsig=50mVp-p 100 MOUNTED ON 0.2 x 0.2” (5x5mm) COPPER PAD AREA 10 10 1 1 10 REVERSE VOLTAGE, VOLTS 100 1 0.01 0.1 1 10 t, PULSE DURATION, SEC