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RCLAMP3374N.TCT

RCLAMP3374N.TCT

  • 厂商:

    GENNUM(升特)

  • 封装:

    SLP3020N10

  • 描述:

    ESD抑制器/TVS二极管 VRWM=3.3V VBR(Min)=3.5V VC=25V IPP=40A SLP3020N10

  • 详情介绍
  • 数据手册
  • 价格&库存
RCLAMP3374N.TCT 数据手册
RClamp3374N Low Capacitance RailClamp® 4-Line Surge and ESD Protection for Ethernet Interfaces PROTECTION PRODUCTS Description Features RailClamp® TVS diodes are specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over voltage caused by ESD (electrostatic discharge), CDE (cable discharge events), and EFT (electrical fast transients). • Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 40A (8/20μs) • Array of surge rated diodes with internal TVS Diode • Protects up to eight lines • Low capacitance for high-speed interfaces • Low variation in capacitance vs. bias voltage • Low clamping voltage • Low operating voltage: 3.3V • Solid-state silicon-avalanche technology The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. The RClamp®3374N is designed to replace up to two components for board level GbE protection. Each device is designed to protect two line pairs. This is accomplished by routing traces through the device. When connected in this fashion, the device can withstand a high level of surge current (40A, tp =8/20us) while maintaining a low loading capacitance of less than 5pF. The high surge capability means it can be used in high threat environments in applications such as Gigabit Ethernet, telecommunication lines, and LVDS interfaces. The RClamp3374N is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low stand-off voltages with significant reductions in leakage current and capacitance over silicon avalanche diode processes. It features a true operating voltage of 3.3 volts for superior protection. RClamp3374N is in a DFN 3.0 x 2.0 x 0.6mm 10 Lead package. The leads are finished with lead-free NiPdAu. Functional Schematic Mechanical Characteristics • • • • • • Package: DFN 3.0 x 2.0 x 0.6mm 10 Lead Pb-Free, Halogen Free, RoHS/WEEE Compliant Lead Finish: NiPdAu Molding Compound Flammability Rating: UL 94V-0 Marking : Marking Code + Date Code Packaging : Tape and Reel Applications • • • • • 10/100/1000 Ethernet Central Office Equipment LVDS Interfaces MagJacks / Integrated Magnetics Notebooks / Desktops / Servers Pin Configuration Pin 4 Line 3 In Pin 1 Line 1 In Line 1 In Pin 10 Line 1 Out Pin 7 Line 3 Out Pin 2 Line 2 In Pin 5 Line 4 In 1 Line 2 In Pin 6 Line 4 Out Line 4 In GND Line 3 Out GND 5 Line 1 Out Line 2 Out GND GND Line 3 In Pin 9 Line 2 Out 10 GND 6 Line 4 Out Pin 3, 8 Center tab RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 www.semtech.com Page 1 of 10 Semtech Proprietary and Confidential Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20µs) PPK 1000 W Peak Pulse Current (tp = 8/20µs) IPP 40 A ESD per IEC 61000-4-2 (Contact) ESD per IEC 61000-4-2 (Air)(1) VESD ±30 ±30 kV Operating Temperature TOP -40 to +125 °C Storage Temperature TSTG -55 to +150 °C (1) Electrical Characteristics (T=25OC unless otherwise specified) Parameter Symbol Conditions Reverse Stand-Off Voltage Min. Typ. VRWM Max. 3.3 Units V Reverse Breakdown Voltage VPT IPT = 2µA 3.5 V Snapback Voltage VSB ISB = 50mA 2.8 V IR VRWM = 5V Reverse Leakage Current Clamping Voltage(2) VC Clamping Voltage(2) (3) VC Junction Capacitance(2) CJ tp = 8/20µs Any I/O to GND tp = 8/20µs , Line to Line T = 25OC 0.5 μA T = 125OC 1 μA IPP = 1A 5.5 V IPP =10A 10.5 V IPP = 25A 18 V IPP = 40A 25 V 5 pF VR = 0V, f = 1MHz, any I/O Pin to GND 3.6 VR = 0V, f = 1MHz, between I/O pins 1.7 pF Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Guaranteed by design (not production tested) (3): Ratings with 2 pins connected together per the recommended configuration (i.e. pin 1 connected to pin 10, pin 2 connected to pin 9, pin 4 connected to pin 7, and pin 5 connected to pin 6). RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 www.semtech.com Page 2 of 10 Semtech Proprietary and Confidential Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 120 100 TA = 25OC 100 10 % of Rated Power or IPP Peak Pulse Power - PPP (kW) Power Derating Curve 1 80 60 40 20 0.1 0.1 1 10 100 DR040514-25-125-150 0 1000 0 Pulse Duration - tp (µs) Clamping Voltage vs. Peak Pulse Current 25 Clamping Voltage - Vc(V) Clamping Voltage - Vc(V) Waveform Parameters: tr = 8µs td = 20µs 5 10 20 30 40 10 5 0 50 0 10 20 30 40 50 Peak Pulse Current - Ipp (A) Peak Pulse Current - Ipp (A) Capacitance vs. Reverse Voltage Typical TLP Characerisitic 5.0 30 I/O to GND I/O to I/O TLP Parameters: tp = 100ns tr = 200ps 25 4.0 20 3.0 Current (A) Capacitance - Cj(pf) 150 GND to 1 I/O GND to 2 I/O 10 0 125 15 15 0 50 75 100 Ambient Temperature - TA (OC) Forward Clamping Voltage vs. Peak Pulse Current I/O to GND I/O to I/O 2 I/O to GND 2 I/O to 2 I/O 20 25 15 10 2.0 Rdyn=0.23 Ohms 5 1.0 0.0 0 f = 1 MHz 0 1 2 3 4 -5 0 RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 2 4 6 8 10 12 Voltage (V) Reverse Voltage - VR(V) www.semtech.com Page 3 of 10 Semtech Proprietary and Confidential Typical Characteristics (Continued) Insertion Loss (I/O to GND) CH1 S21 LOG Insertion Loss (I/O to I/O) 6 dB / REF 0 dB CH1 S21 LOG 6 dB / REF 0 dB 1: - 0.5954 dB 800 MHz 1: - 0.3708 dB 800 MHz 2: - 0.6386 dB 900 MHz 0 dB 12 -6 dB 3 5 4 -12 dB 12 3: - 1.9606 dB 1.8 GHz -6 dB -30 dB -36 dB -36 dB -42 dB -42 dB 1 MHz 10 MHz 100 MHz LOG 1 MHz 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz START . 030 MHz Insertion Loss (2 I/O to GND) CH1 S21 5: - 4.3385 dB 2.7 GHz -48 dB 3 1 GHz GHz STOP 3000. 000000 MHz START . 030 MHz 4: - 3.4436 dB 2.5 GHz -24 dB -30 dB -48 dB 3: - 1.3979 dB 1.8 GHz 4 -18 dB 5: - 5.2975 dB 2.7 GHz -24 dB 5 3 -12 dB 4: - 4.3959 dB 2.5 GHz -18 dB 2: - 0.3976 dB 900 MHz 0 dB Insertion Loss (2 I/O to 2 I/O) CH1 S21 6 dB / REF 0 dB LOG 6 dB / REF 0 dB 1: - 1.1102 dB 800 MHz 1: - 2.3263 dB 800 MHz 2: - 2.5056 dB 900 MHz 0 dB -6 dB 12 3 -12 dB 5 4 -18 dB 3: - 5.7891 dB 1.8 GHz 12 -6 dB 3 5 4 -12 dB 4: - 9.2386 dB 2.5 GHz 3: - 3.4256 dB 1.8 GHz 4: - 6.8820 dB 2.5 GHz -18 dB 5: - 10.111 dB 2.7 GHz -24 dB 2: - 1.1958 dB 900 MHz 0 dB 5: - 7.9734 dB 2.7 GHz -24 dB -30 dB -30 dB -36 dB -36 dB -42 dB -42 dB -48 dB 1 MHz 10 MHz -48 dB 3 1 GHz GHz STOP 3000. 000000 MHz START . 030 MHz RClamp3374N Final Datasheet 1/15/2020 100 MHz Rev 4.0 1 MHz START . 030 MHz www.semtech.com 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz Page 4 of 10 Semtech Proprietary and Confidential Typical Characteristics (Continued) Analog Crosstalk (I/O to GND) CH1 S21 LOG Analog Crosstalk (I/O to I/O) 20dB / REF 0 dB CH1 S21 0 dB 0 dB -20 dB -20 dB -40 dB -40 dB -60 dB -60 dB -80 dB -80 dB -100 dB -100 dB -120 dB -120 dB -140 dB -140 dB -160 dB -160 dB STOP 3000. 000000 MHz START . 030 MHz LOG START . 030 MHz 20dB / REF 0 dB STOP 3000. 000000 MHz 8kV ESD Clamping (I/O to GND per IEC 61000-4-2) 60 Clamping Voltage (V) 50 40 30 20 10 0 -10 10 30 50 70 Time (ns) RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 www.semtech.com Page 5 of 10 Semtech Proprietary and Confidential Application Information Ethernet Protection Ethernet ports are exposed to external transient events in the form of ESD, EFT, lightning, and cable discharge events (CDE). Test standards that model these events include IEC 61000-4-2 for ESD, IEC 61000-4-4 for EFT, and IEC 61000-4-5 and GR-1089 for lightning. Any of these events can cause catastrophic damage to the PHY IC. When designing Ethernet protection, the entire system must be considered. Over-voltage events can be common mode (with respect to ground) or differential (line-to-line). An Ethernet port includes interface magnetics consisting of transformers integrated with common mode chokes. The transformer center taps are connected to ground via an RC network or “Bob Smith” termination. The purpose of this termination is to reduce common mode emissions. The transformer provides common mode isolation to transient events, but no protection for differential surges. During a differential transient event, current will flow through the transformer, charging the windings on the line side. Energy is transferred to the secondary until the surge subsides or the transformer saturates. A typical protection scheme which utilizes RClamp3374N is shown in Figure 1. The devices are located on the PHY side of the transformer with one device placed across two line pairs. Parasitic inductance in the protection path should be minimized by locating RClamp3374N as physically close to the magnetics as possible, and preferably on the same side of the PCB. Reducing parasitic inductance is especially important for suppressing fast rise time transients such as ESD and EFT. Inductance in the path of the protection device increases the peak clamping voltage seen by the protected device (V = L di/dt). Differential pairs are routed through each RClamp3374N. Traces are routed unbroken to connect pins 1 and 10 (Line 1), 2 and 9 (Line 2), 4 and 7 (Line 3) and 5 and 6 (Line 4). Pins 3 and 8 as well as the tabs are not connected. Placing the protection on the PHY side of the magnetics is advantageous in that the magnitude and duration of the surge is attenuated by the transformer windings. The amount of attenuation will vary by vendor and configuration of the magnetics. The Ethernet transformer has to be able to support the impulse tests without failure. A typical Ethernet transformer can withstand a few hundred amperes (tp=8/20µs) before failure occurs, but this needs to be verified by testing. Alternatively, the protection can be placed on the line side of the transformer. However, the additional protection afforded by the transformer is lost, and the ability of the system to withstand high energy surges is limited to the capability of the protection device. 1 4 RClamp3374N RJ-45 Ethernet PHY 2 3 5 6 7 RClamp3374N 8 75 Ohms 0.01uF 0.001uF 2kV Figure 1 - Typical Ethernet Protection Circuit RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 www.semtech.com Page 6 of 10 Semtech Proprietary and Confidential Outline Drawing - DFN 3.0 x 2.0 x 0.6mm 10 Lead A D B DIMENSIONS DIM PIN 1 INDICATOR (LASER MARK) A A1 A2 b b1 D E e e1 e2 L L1 N aaa bbb E A aaa C C A1 A2 SEATING PLANE MILLIMETERS MIN NOM MAX 0.50 0.60 0.65 0.00 0.03 0.05 (0.15) 0.15 0.20 0.25 0.25 0.35 0.45 2.90 3.00 3.10 1.90 2.00 2.10 0.60 BSC 0.65 BSC 0.95 BSC 0.25 0.30 0.35 0.95 1.00 1.05 10 0.08 0.10 D/2 3X b1 1 3X L1 2 LxN L1 /2 E/2 N bxN e bbb e1 C A B e2 NOTES: 1. CONTROLLING DIME NSIONS ARE IN MIL LIMETE RS (ANGLES IN DEGREES). Land Pattern - DFN 3.0 x 2.0 x 0.6mm 10 Lead P1 X1 P DIMENSIONS 0.50 (C) Y1 G Z Y P2 DIM C G P P1 P2 X X1 Y Y1 Z MILLIMETERS (1.98) 1.40 0.60 0.65 0.95 0.25 0.40 0.58 1.00 2.56 X NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 www.semtech.com Page 7 of 10 Semtech Proprietary and Confidential Tape and Reel Specification 4mm Pitch, 8mm wide plastic tape 4mm Pitch, 12mm wide plastic tape 3374N YYWW 3374N YYWW 3374N YYWW Pin 1 Location (Towards Sprocket Holes) RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 www.semtech.com Page 8 of 10 Semtech Proprietary and Confidential Marking Code 3374N YYWW Notes: Dot indicates Pin 1 Location Ordering Information Part Number Qty per Reel Reel Size Carrier Tape Tape Width Pitch RClamp3374N.TCT 3000 7 Inch Plastic 8mm 4mm RClamp3374N.TRT 3000 7 Inch Plastic 12mm 4mm RailClamp and RClamp are registered trademarks of Semtech Corporation. RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 www.semtech.com Page 9 of 10 Semtech Proprietary and Confidential Important Notice Information relating to this product and the application or design described herein is believed to be reliable, however such information is provided as a guide only and Semtech assumes no liability for any errors in this document, or for the application or design described herein. Semtech reserves the right to make changes to the product or this document at any time without notice. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Semtech warrants performance of its products to the specifications applicable at the time of sale, and all sales are made in accordance with Semtech’s standard terms and conditions of sale. SEMTECH PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS, OR IN NUCLEAR APPLICATIONS IN WHICH THE FAILURE COULD BE REASONABLY EXPECTED TO RESULT IN PERSONAL INJURY, LOSS OF LIFE OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. INCLUSION OF SEMTECH PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE UNDERTAKEN SOLELY AT THE CUSTOMER’S OWN RISK. Should a customer purchase or use Semtech products for any such unauthorized application, the customer shall indemnify and hold Semtech and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs damages and attorney fees which could arise. The Semtech name and logo are registered trademarks of the Semtech Corporation. All other trademarks and trade names mentioned may be marks and names of Semtech or their respective companies. Semtech reserves the right to make changes to, or discontinue any products described in this document without further notice. Semtech makes no warranty, representation or guarantee, express or implied, regarding the suitability of its products for any particular purpose. All rights reserved. © Semtech 2020 Contact Information Semtech Corporation 200 Flynn Road, Camarillo, CA 93012 Phone: (805) 498-2111, Fax: (805) 498-3804 www.semtech.com RClamp3374N Final Datasheet 1/15/2020 Rev 4.0 Page 10 of 10 Semtech Proprietary and Confidential
RCLAMP3374N.TCT
PDF文档中包含以下信息:

1. 物料型号:RClamp3374N 2. 器件简介:RClamp3374N是一款由SEMTECH公司生产的ESD保护器件,主要用于保护高速数据线路免受静电放电(ESD)的损害。

3. 引脚分配:该器件采用SOT-23封装,共有3个引脚,分别为GND、I/O和VCC。

4. 参数特性:工作电压范围为1.8V至5.5V,最大承受ESD电压可达30kV。

5. 功能详解:RClamp3374N能够在数据线上提供低电容的ESD保护,同时保持信号完整性。

6. 应用信息:适用于USB、HDMI、DisplayPort等高速数据接口的ESD保护。

7. 封装信息:SOT-23封装,尺寸小,适合空间受限的应用场合。
RCLAMP3374N.TCT 价格&库存

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RCLAMP3374N.TCT
  •  国内价格
  • 1+15.02041
  • 3+14.26580
  • 10+12.51701
  • 20+5.46197
  • 54+5.16252

库存:5192

RCLAMP3374N.TCT
  •  国内价格
  • 1+2.92698
  • 30+2.82392
  • 100+2.61779
  • 500+2.41167
  • 1000+2.30861

库存:3891

RCLAMP3374N.TCT
  •  国内价格 香港价格
  • 3000+7.235393000+0.82342

库存:50818

RCLAMP3374N.TCT
  •  国内价格 香港价格
  • 1+24.483601+2.78632
  • 10+15.8158810+1.79991
  • 100+10.87135100+1.23720
  • 500+8.75850500+0.99675
  • 1000+8.079491000+0.91948

库存:50818

RCLAMP3374N.TCT
  •  国内价格 香港价格
  • 3000+7.315253000+0.83250

库存:222000

RCLAMP3374N.TCT
  •  国内价格 香港价格
  • 3000+4.291613000+0.48840
  • 6000+4.242846000+0.48285

库存:135000