SC1301AISTRT

SC1301A/B 2A High Speed Low-Side MOSFET Driver in SOT-23 POWER MANAGEMENT Description Features The SC1301A/B is a cost effective single-channel highspeed MOSFET driver. The driver is capable of driving a 1000pF load in 20ns rise/fall time and has a 60ns propagation delay time from input transition to the gate of the power MOSFET. The high current driving capability (2A peak) allows fast switching up to 1MHz. The SC1301A is noninverting and the SC1301B is inverting. ‹ +4.5V to +16.5V operation ‹ Fast rise and fall times (20ns typical with 1000pf load ) 2A peak drive current Enable/disable control TTL-compatible input Inverting or noninverting versions Undervoltage lockout Low supply current -40°C to 85°C ambient temperature operating range Over temperature protection ESD protection SOT-23-5 package. Also available in Lead-free, fully WEEE and RoHS compliant. ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ An Undervoltage lockout circuit is included to guarantee that the driver output is low when Vcc is less than or equal to 4.1V (typ) at supply ramp up. An internal temperature sensor shuts down the driver in the event of overtemperature. The 5-pin SOT-23 package uses minimum space. Applications ‹ Switch-mode power supplies ‹ Battery powered applications ‹ Solenoid and motor drives Typical Application Circuit +12V 10uF Vload 0.1uF 1 EN OUT 4 2 5 IN GND Input SC1301A VCC 3 LOAD Revision: May 30, 2007 1 www.semtech.com SC1301A/B POWER MANAGEMENT Absolute Maximum Ratings PRELIMINARY Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Parameter Symbol Max Units Supply Voltage V cc -0.3 to 20 V Operating Supply Voltage V cc -0.3 to 16.5 V Input Voltage VIN -0.3 to Vcc V Enable Voltage V EN -0.3 to Vcc V Continuous Power Dissipation Pd Internally limited W 260 °C/W TA -40 to +85 °C Storage Temperature Range TSTG -65 to +150 °C Lead Temperature (Soldering)10 sec TLEAD 260 °C ESD Rating (Human Body Model) ESD 3 kV Thermal Resistance Junction to Ambient Operating Temperature Range DC Electrical Characteristics Unless otherwise specified: TA = 25°C, VCC = 12V, VIN = 5V, VEN = 5V Parameter Symbol Conditions IQ Min Typ Max Units VIN = 0V for SC1301A 3.0 4.0 mA VIN = 5V for SC1301B 3.0 4.0 4.1 4.4 Supply Current Quiescent Current Under-Voltage Lockout Threshold Voltage VCC 3.9 V Enable Enable Voltage V EN 0 < V E N < V cc Disable Voltage V EN 0 < V E N < V cc Delay to Output tD_EN EN from low to high 60 nS Delay to Output tD_DIS EN from high to low 40 nS IEN 0 < V E N < V cc 5 High Level Input Voltage VIH 0 < VIN < Vcc Low Level Input Voltage VIL 0 < VIN < Vcc Input Current IIN 0 < VIN < Vcc Enable Input Current 2.0 V 0.8 12 V µA Input  2007 Semtech Corp. 2 2.0 V 5 0.8 V 12 µA www.semtech.com SC1301A/B POWER MANAGEMENT DC Electrical Characteristics (Cont.) Unless otherwise specified: TA = 25°C, VCC = 12V, VIN = 5V, VEN = 5V Parameter Symbol Conditions Min Typ Max Units IPK_SOURCE VOUT = 0.5V, tPW < 10µS, single pulse 2 A IPK_SINK VOUT = Vcc - 0.5V, tPW < 10µS, single pulse 2 A 150 °C Output Output Peak Current Thermal Shutdow n Over Temperature Trip Point TJ_OT AC Electrical Characteristics Unless otherwise specified: TA = 25°C, VCC = 12V, VEN = 5V, CL = 1000pF Parameter Symbol Conditions Min Typ Max Units Rise time tR See Timing Diagram 20 ns Fall time tF See Timing Diagram 20 ns Propagation delay time tD1 See Timing Diagram 60 ns Propagation delay time tD2 See Timing Diagram 60 ns Timing Diagrams 5V Input 0V 90% 10% tR tF 90% Non-inverted Output SC1301A 90% 10% Inverted Output SC1301B 10% tF tR 90% 90% 10% 10% tD1  2007 Semtech Corp. tD2 3 www.semtech.com SC1301A/B POWER MANAGEMENT Pin Configuration PRELIMINARY Ordering Information Part Number Top View Top Mark Package(1) A J0 A SOT-23-5 A J0 B SOT-23-5 SC1301AISKTR SC1301AISKTRT(2) SC1301BISKTR SC1301BISKTRT(2) Notes: (1) Only available in tape and reel packaging. A reel contains 3000 devices. (2) Lead-free product. This product is fully WEEE and RoHS compliant. (SOT-23-5L) Pin Descriptions Pin # Pin Name Pin Function 1 IN 2 GND Ground. 3 VC C Supply: +4.5V to +16.5V supply. During UVLO, the OUTPUT is held low. 4 OUT Output gate drive for the switching MOSFET. 5 EN TTL-compatible input signal to the driver. SC1301A: Logic high forces the OUT to the VCC. Logic low forces the OUT to the GND. SC1301B: Logic high forces the OUT to the GND. Logic low forces the OUT to the VCC. Enable/disable control. When the EN is driven low, the OUTPUT is low. When left open, the OUTPUT is low. Block Diagrams VCC BIAS TTL Input BANDGAP SC1301A  2007 Semtech Corp. VCC OUT PRE IN DRIVER BIAS TTL Input EN OUT PRE IN TTL Input DRIVER BIAS EN BIAS TTL Input BANDGAP SC1301B GND 4 GND www.semtech.com SC1301A/B POWER MANAGEMENT Applications Information Using the SC1301A/B for fast switching actions, such as turning on or turning off the capacitive load will significantly reduce the device switching loss for high frequency applications. Accordingly, the thermal stress and reliability of the device can be improved. Due to the non-linear characteristics of the input capacitance of a device, the test load for the SC1301A/B is a capacitor. Thus, the power from the bias power supply can be calculated based on this setup. The energy, which is required to charge the capacitor for turning on process, is calculated by: The SC1301A/B is a high speed, high peak current MOSFET driver. It is designed to drive power MOSFETs with ultra-low rise/fall time and propagation delays. As the switching frequency of PWM controllers is increased to reduce power converters volume and cost, fast rise and fall times are necessary to minimize switching losses. While discrete solutions can achieve reasonable drive capability, implementing delay and other housekeeping functions necessary for safe operation can become cumbersome and costly. The SC1031A/B presents a total solution for the high-speed, high power density applications. A wide input supply range of 4.5V - 16.5V allows operation in battery powered applications as well as distributed power systems. E on = 1 ⋅ C ⋅ V2 2 where, C is the load capacitance and V is the voltage applied to the driver. Supply Bypass and Layout A 4.7µF to 10µF tantalum bypass capacitor with low ESR (equivalent series resistance) and an additional 0.1µF ceramic capacitor in parallel are recommended to control switching and supply transients. Low ESR (equivalent series resistance) metalized film capacitors may also be used. As with any high speed, high current circuit, proper layout is critical in achieving optimum performance of the SC1301A/B. Attention should be paid to the proper placement of the driver, the switching MOSFET and the bypass capacitors. During the turning off process, the same amount of energy will be dissipated in the resistive elements in the gate drive. Therefore, the energy for one switching action (one turning on and one turning off) will be as follows: E total = C ⋅ V 2 The power dissipation due to the gate driving switching is calculated by: The driver should be placed as close as possible to eliminate the possibility of oscillation caused by trace inductance and the MOSFET gate capacitance. A resistor in the range of 10Ω could be used in series with the gate drive to damp the ringing if the drive output path is not short enough. The bypass capacitors should be also placed closely between Vcc and GND of the driver. A Schottky diode may be connected between the ground and the output pin to avoid latch-up in some applications. where, f is switching frequency for a given application. Below is an example to calculate the power dissipation for the given application. Drive Capability and Power Dissipation Pgate = (200kHz ) ⋅ (1nF )⋅ (12 ) = 29mW Pgate = f ⋅ C ⋅ V 2 With VCC = 12V, C = 1nF and f = 200kHz, the power loss for the gate switching actions will be as: 2 The SC1301A/B is able to deliver 2A peak current typically for driving a capacitive load, such as a MOSFET. This high peak current will charge the input capacitance of the device to turn on quickly. A similar amount of current is needed to discharge the capacitance to ground to turn the device off.  2007 Semtech Corp. The power supply current will be: I= 5 Pgate VCC = 29mW = 2.4mA 12 V www.semtech.com SC1301A/B POWER MANAGEMENT Applications Information (Cont.) PRELIMINARY Thermal Information The lifetime and performance of a driver is basically determined by the drive power requirements of the load, the thermal characteristics of the driver package and its cooling method. The driver’s junction temperature must be kept within the rated limit at all times. The application system has to effectively remove the heat generated in the driver in order for proper functions and performance. If the junction temperature reaches 150oC, the internal protection circuit will be triggered to shut down the gate driver. As shown in the power derating table, the SC1301A/B has a power limit of 385mW when the ambient temperature is less than 25 oC. As the ambient temperature reaches 85oC, the allowed maximum power dissipation for the driver will be 154mW. When the ambient temperature is somewhere between 25oC and 85 oC, the power dissipation for the driver should be derated according to the table. For each degree increasing of the ambient temperature, 3.85mW decreasing should be applied to the driver power dissipation. Possible cooling methods may include using big pads, natural air-cooling by a careful layout and forced air-cooling if necessary. Pow er Derating Table TA