SC1405DISTRT

SC1405D High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description Features The SC1405D is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through. Each driver is capable of driving a 3000pF load in 15ns rise/ fall time and has ULTRA-LOW propagation delay from input transition to the gate of the power FETs. Adaptive Overlap Protection circuit ensures that the synchronous FET does not turn on until the top FET source has reached a voltage low enough to prevent shoot-through. The delay between the bottom gate going low to the top gate transitioning high is externally programmable via a capacitor to minimize dead time. The bottom FET may be disabled at light loads by keeping S_MOD low to trigger asynchronous operation, thus saving the bottom FET’s gate drive current and inductor ripple current. ‹ Fast rise and fall times (15ns withPRELIMINARY 3000pf load) ‹ 14ns max. Propagation delay (BG going with low) ‹ Adaptive and programmable shoot-through protection ‹ Adaptive overvoltage protection ‹ Wide input voltage range (4.5V - 25V) ‹ Programmable delay between FETs ‹ Power saving asynchronous mode control ‹ Output overvoltage protection/overtemp shutdown ‹ Under-Voltage lock-out and power ready signal ‹ Less than 10µA stand-by current (EN=low) ‹ Power ready output signal ‹ High frequency (to 1.2MHz) operation allows use of small inductors and low cost caps in place of electrolytics ‹ TSSOP-14 package An internal voltage reference allows threshold adjustment for an Output Over-Voltage protection circuitry, independent of the PWM controller. The device provides overvoltage protection independent of the PWM feedback loop with a unique “adaptive OVP” comparator which rejects noise but responds quickly to a true OVP situation. Applications ‹ High Density/Fast transient microprocessor power supplies ‹ Motor Drives/Class-D amps ‹ High efficiency portable computers Under-Voltage-Lock-Out circuit is included to guarantee that both driver outputs are off when Vcc is less than or equal to 4.4V (typ) at supply ramp up (4.35V at supply ramp down). A CMOS output provides status indication of the 5V supply. A low enable input places the IC in standby mode, reducing supply current to less than 10µA. Typical Application Circuit Revision: June 8, 2005 1 www.semtech.com SC1405D POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Parameter Symbol Minimum Maximum Units VCCMAX -0.3 7 V BST to PGND VMAXBST-PGND -0.3 30 V BST to DRN VMAXBST-DRN -0.3 8 V DRN to PGND VMAXDRN-PGN DC -2 25 V VMAXPULSE tPULSE < 100nS -5 25 V -0.3 10 V -0.3 VCC + 0.3 V -1 +1 V 0.66 2.56 W VCC Supply Voltage DRN to PGND Pulse OVP_S to PGND Conditions VMAXOVP S-PGND EN, CO, DSPS, MODE, PRDY, DELAY to AGND AGND to PGND Tamb = 25°C, TJ = 125°C Tcase = 25°C, TJ = 125°C Continuous Power Dissipation Pd Thermal Impedance Junction to Case θJ C 40 °C/W Thermal Impedance Junction to Ambient θJ A 150 °C/W Junction Temperature Range TJ -40 +125 °C Storage Temperature Range TSTG -65 +150 °C Lead Temperature (Soldering) 10 Sec. TLEAD 300 °C NOTE: (1) Specification refers to application circuit. Electrical Characteristics - DC Operating Specifications Unless otherwise specified: -40 < TJ < 125°C; VCC = 6V; 4V < VBST < 26V Parameter Symbol Conditions Min Typ Max Units 4.6 5 6.0 V 10 µA Pow er Supply Supply Voltage Quiescent Current V CC Iq_stby E N = 0V Iq_op VCC = 5V, CO = 0V High Level Output Voltage VOH VCC = 4.7V, lload = 10mA Low Level Output Voltage VOL VCC < UVLO threshold, lload = 10µA IO_SINK VPRDY = 0.4V Quiescent Current, operating 1 mA 4.55 V PR D Y Sink Current  2005 Semtech Corp. 2 4.5 0.1 5 10 0.2 V mA www.semtech.com SC1405D POWER MANAGEMENT Electrical Characteristics - DC Operating Specifications Parameter Symbol Conditions Min High Level Output Voltage VOH VCC = 4.6V, Cload = 100pF 4.15 Low Level Output Voltage VOL VCC = 4.6V, Cload = 100pF Typ Max Units D S P S _D R V 0.05 V 4.6 V Under Voltage Lockout Start Threshold Hysteresis 4.2 Vhys Logic Active Threshold 4.4 0.05 EN is low V 1.5 V 1.28 V Overvoltage Protection Trip Threshold Hysteresis VTRIP 1.17 1.225 0.8 VhysOVP V Trip Delay, 50mV Overdrive TJ = 0 to 125oC 300 470 800 ns Trip Delay, 100mV Overdrive TJ = 0 to 125oC 125 225 400 ns S_MOD High Level Input Voltage VIH Low Level Input Voltage VIL 2.0 V 0.8 V Enable High Level Input Voltage VIH Low Level Input Voltage VIL 2.0 V 0.8 V CO High Level Input Voltage VIH Low Level Input Voltage VIL 2.0 V 0.8 V Thermal Shutdow n Over Temperature Trip Point TOTP 165 o C Hysteresis THYST 10 o C IPKH 3 A 1 Ω High-Side Driver Peak Output Current Output Resistance RsrcTG RsinkTG duty cycle < 2%, tpw < 100µs, TJ = 125°C, VBST - VDRN = 4.5V, VTG = 4.0V (src)+VDRN or VTG = 0.5V (sink)+VDRN .7 Low -Side Drive Peak Output Current Output Resistance IPKL RsrcBG RsinkBG  2005 Semtech Corp. duty cycle < 2%, tpw < 100µs, TJ = 125°C, VV S = 4.6V, VBG = 4V (src) or VLOWDR = 0.5V (sink) 3 3 A 1.2 Ω 1.0 www.semtech.com SC1405D POWER MANAGEMENT Electrical Characteristics - AC Operating Specifications Parameter Symbol Conditions rise time trTG1 fall time Min Typ Max Units CI = 3nF, VBST - VDRN = 4.6V, 14 23 ns tfTG CI = 3nF, VBST - VDRN = 4.6V, 12 19 ns propagation delay time, TG going high tpdhTG CI = 3nF, VBST - VDRN = 4.6V, C-delay=0 20 32 ns propagation delay time, TG going low tpdlTG CI = 3nF, VBST - VDRN = 4.6V, 15 24 ns High Side Driver Low -Side Driver rise time trBG CI = 3nF, V V S = 4.6V, 15 24 ns fall time trBG CI = 3nF, V V S = 4.6V, 13 21 ns propagation delay time, BG going high tpdhBGHI CI = 3nF, VBST - VDRN = 4.6V, C-delay=0 12 19 ns propagation delay time, TG going low tpdlBG CI = 3nF, V V S = 4.6V, DRN UVLO threshold, Delay measured from EN > 2.0V to PRDY > 3.5V 10 µs EN is transitioning fro high to low tpdhUVLO V_5 >UVLO threshold, Delay measured from EN < 0.8V to PRDY < 10% of V_5V 500 µs trDSPS DR. CI = 100 pf, V_5 = 4.6V 20 ns propagation delay, DSPS_DR going high tpdhDSPS DR S_MOD goes high and BG goes high or S_MOD goes low 10 ns propagation delay, DSPS_DR goes low tpdlDSPS DR S_MOD goes high and BG goes low 10 ns Under-Voltage Lockout PR D Y D S P S _D R rise/fall time NOTE: (1) This device is ESD sensitive. Use of standard ESD handling precautions is required.  2005 Semtech Corp. 4 www.semtech.com SC1405D POWER MANAGEMENT Application Circuit - TSSOP-14 INPUT POWER + + P_READY >> PWM IN (20KHz-1MHz) 47pF 7 2 4 6 1 5