UCLAMP1561P.TNT

µClamp0561P - µClamp6061P High Power MicroClamp® 1-Line ESD and Surge Protection PROTECTION PRODUCTS Description Features µClamp® TVS diodes are designed to protect sensitive electronics from damage or latch-up due to EOS, lightning, CDE, and ESD. They feature large crosssectional area junctions for conducting high transient currents. These devices offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation. • Transient Protection to ŒŒ IEC 61000-4-2 (ESD) 30kV (Air), 30kV (Contact) ŒŒ IEC 61000-4-4 (EFT) 4kV (5/50ns) ŒŒ IEC 61000-4-5 (Lightning) 8-80A (8/20µs) • Protects one data or power line • Working voltage options: 5V, 10V, 12V, 15V, 24V, 30V, 36V, 40V, 60V • Low leakage current • High peak pulse current capability • Solid-state silicon-avalanche technology µClamp®xx61P series are designed for for use in harsh transient environments. They feature extremely good protection characteristics highlighted by high surge current capability, low peak ESD clamping voltage, and high ESD withstand voltage. Device options are available for protecting data or power lines operating at 5V to 60V. µClamp®xx61P are in a 2-pin SLP1608P2 package measuring 1.6 x 0.8 mm with a nominal height of 0.50mm. The leads are finished with lead-free NiAu. High surge current capability and low clamping voltage making them ideal for protecting VBus, battery, and other power lines in consumer and industrial electronics. Package Dimension Mechanical Characteristics • • • • • • SLP1608P2 package Pb-Free, Halogen Free, RoHS/WEEE compliant Nominal Dimensions: 1.6 x 0.8 x 0.50 mm Lead Finish: NiAu Marking: Marking code Packaging: Tape and Reel Applications • • • • • • • • Cellular Handsets Industrial Equipment Microcontroller RESET and IRQ Pins USB Voltage Bus Battery protection Tablet PC CCTV Cameras Instrumentation Schematic & Pin Configuration 0.80 2 1.60 1 0.50 µClamp0561P - µClamp6061P Final Datasheet Rev 4.1 Revision date 8/27/2015 SLP1608P2 (Bottom View) www.semtech.com 1 of 12 Semtech Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20µs) PPK 1200-1600 W Peak Pulse Current (tp = 8/20µs) IPP 8-80 A ESD per IEC 61000-4-2 (Contact)(1) ESD per IEC 61000-4-2 (Air)(1) VESD ±30 ±30 kV Operating Temperature TJ -40 to +125 O Storage Temperature TSTG -55 to +150 O C C Electrical Characteristics (T=25OC unless otherwise specified) µClamp0561P Parameter Reverse Stand-Off Voltage Symbol Conditions VRWM Reverse Breakdown Voltage VBR Min. Typ. -40OC to 125OC Pin 2 to Pin 1 It = 1mA, Pin 2 to Pin 1 5 V 7 9 V 50 300 nA IR Peak Pulse Current IPP tp = 8/20µs 80 A Clamping Voltage(2) VC IPP = 40A, tp = 8/20µs, Pin 2 to Pin 1 12 V Clamping Voltage(2) VC IPP = 80A, tp = 8/20µs, Pin 2 to Pin 1 15 V RDYN tp = 0.2/100ns (TLP) Pin 2 to Pin 1 Junction Capacitance CJ T = 25OC Units Reverse Leakage Current Dynamic Resistance(3), (4) VRWM = 5V 6 Max. VR = 0V, f = 1MHz Pin 2 to Pin 1 0.05 T = 25OC Ohms 800 pF Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2):Tested using a constant current source (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and V TLP averaging window: t1 = 70ns to t2 = 90ns. (4): Dynamic resistance calculated from ITLP = 4A to ITLP = 16A µClamp0561P - µClamp6061P Final Datasheet Rev 4.1 Revision date 8/27/2015 www.semtech.com 2 of 12 Semtech Electrical Characteristics (T=25OC unless otherwise specified) µClamp1061P Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol Conditions VRWM VBR Min. Typ. -40OC to 125OC Pin 2 to Pin 1 It = 1mA, Pin 2 to Pin 1 10 V 13.5 15.5 V