UCLAMP3301P.TCT

uClamp3301P Low Voltage μClamp® for ESD and CDE Protection PROTECTION PRODUCTS - MicroClamp® Description Features ® The μClamp TVS diodes are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). ‹ Transient protection for data lines to ‹ ‹ ‹ ‹ ‹ ‹ The μClamp®3301P is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The μClamp3301P is in an 2-pin SLP1006P2 package. It measures 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. IEC 61000-4-2 (ESD) IEC 61000-4-4 (EFT) Cable Discharge Event (CDE) Ultra-small package Protects one data line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Mechanical Characteristics ‹ ‹ ‹ ‹ ‹ ‹ ‹ SLP1006P2 package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 1.0 x 0.6 x 0.5 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking: Marking code, cathode band Packaging: Tape and Reel Applications ‹ ‹ ‹ ‹ ‹ ‹ ‹ Dimensions Cellular Handsets & Accessories Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Schematic & PIN Configuration 1.0 2 0.60 0.65 1 0.50 Maximum Dimensions (mm) Revision 2/24/2010 SLP1006P2 (Bottom View) 1 www.semtech.com uClamp3301P PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20μs) Pp k 40 Watts Maximum Peak Pulse Current (tp = 8/20μs) Ip p 5 Amps VESD +/- 20 +/- 15 kV TJ -40 to +85 °C TSTG -55 to +150 °C ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Punch-Through Voltage V PT IPT = 2μA 3.5 Snap -Back Voltage VSB ISB = 50mA 2.8 Reverse Leakage Current IR VRWM = 3.3V Clamp ing Voltage VC Clamp ing Voltage 3.9 Maximum Units 3.3 V 4.6 V V 0.5 μA IPP = 1A, tp = 8/20μs 5.5 V VC IPP = 5A, tp = 8/20μs 8.0 V Reverse Clamp ing Voltage VCR IPP = 1A, tp = 8/20μs 2.4 V 30 pF Cj I/O p in to Gnd VR = 0V, f = 1MHz 25 Junction Cap acitance I/O p in to Gnd VR = 3.3V, f = 1MHz 14 © 2010 Semtech Corp. 2 0.05 pF www.semtech.com uClamp3301P PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 1 100 % of Rated Power or I PP Peak Pulse Power - P PP (kW) 90 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Duration - tp (µs) Clamping Voltage vs. Peak Pulse Current Normalized Junction Capacitance vs. Reverse Voltage 12 1.2 1 8 Cj(VR) / Cj(VR=0V) Clamping Voltage - VC (V) f = 1 MHz 10 6 4 Waveform Parameters: tr = 8μs td = 20μs 2 1 2 3 4 0 Insertion Loss S21 LOG 0.4 0 5 Peak Pulse Current - IPP (A) CH1 S21 0.6 0.2 0 0 0.8 0.5 1 1.5 2 2.5 Reverse Voltage - VR (V) 3 3.5 ESD Clamping (8kV Contact per IEC 61000-4-2) 6 dB / REF 0 dB 1: -9.2069 dB 900 MHz 2: -12.958 dB 1.8 GHz 3: -11.689 dB 2.5 GHz 0 dB 4: -3.0358 dB 227MHz 4 -6 dB 1 -12 dB 3 2 -18 dB -24 dB -30 dB -36 dB 1 MHz START . 030 MHz © 2010 Semtech Corp. 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz Note: Data is taken with a 10x attenuator 3 www.semtech.com uClamp3301P PROTECTION PRODUCTS Applications Information Device Schematic & Pin Configuration Device Connection Options The μClamp3301P is designed to protect one data or I/O line operating at 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. These devices should not be connected to DC supply rails as they can latch up as described below. Pin 2 Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on as described below. Pin 1 EPD TVS IV Characteristic Curve EPD TVS Characteristics The μClamp3301P is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the μClamp3301P can effectively operate at 3.3V while maintaining excellent electrical characteristics. IPP ISB IPT VF VRWM The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. VSB VPT VC IF tics due to its structures. This point is defined on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately