uClamp3311T
P OTECTION PRODUCTS
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Low Profile µClamp
1-Line ESD protection
F" #
u Transient protection for data lines to
The µClamp series of Transient Voltage Suppressors
(TVS) are designed to replace multilayer varistors
(MLVs) in portable applications such as cell phones,
notebook computers, and PDAs. They offer superior
electrical characteristics such as lower clamping
voltage and no device degradation when compared to
MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to
electrostatic discharge (ESD), lightning, electrical fast
transients (EFT), and cable discharge events (CDE).
The µClamp3311T is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true
operating voltage of 3.3 volts for superior protection
when compared to traditional pn junction devices.
The µClamp3311T is in a 2-pin SLP1006P2T package.
It measures 1.0 x 0.6 x 0.4mm. The leads are spaced
at a pitch of 0.65mm and are finished with lead-free
NiPdAu. Each device will protect one line operating at
3.3 volts. It gives the designer the flexibility to protect
single lines in applications where arrays are not practical. They may be used to meet the ESD immunity
requirements of IEC 61000-4-2. The combination of
small size and high ESD surge capability makes them
ideal for use in portable applications such as cellular
phones, digital cameras, and MP3 players.
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IEC 61000-4-2 (ESD) ±30kV (air), ±30kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
Ultra-small package (1.0 x 0.6 x 0.4mm)
Protects one data line
Low reverse current: 10nA typical (VR=3.3V)
Working voltage: 3.3V
Low leakage current
Solid-state silicon-avalanche technology
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SLP1006P2T package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.0 x 0.6 x 0.4 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code
Packaging : Tape and Reel
A + " !
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Cellular Handsets & Accessories
Portable Instrumentation
Keypads, Side Keys, LCD Displays
Notebooks & Desktop Computers
MP3 Players
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1.0
2
0.60
0.65
1
0.40
Nominal Dimensions (mm)
Revision 4/28/2015
SLP1006P2T (Bottom View)
1
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uClamp3311T
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R ating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20µs)
Pp k
40
Watts
Maximum Peak Pulse Current (tp = 8/20µs)
Ip p
5
A mp s
VESD
+/- 30
+/- 30
kV
TJ
-40 to +85
°C
TSTG
-55 to +150
°C
ESD per IEC 61000-4-2 (Air)1
ESD per IEC 61000-4-2 (Contact)1
Operating Temperature
Storage Temperature
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Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Minimum
Typical
VRWM
Punch-Through Voltage
V PT
IPT = 2µA
3.5
Snap-Back Voltage
VSB
ISB = 50mA
2.8
Reverse Leakage Current
IR
VRWM = 3.3V
Clamping Voltage
VC
Clamping Voltage
3.9
Maximum
Units
3.3
V
4.3
V
V
0.01
0.05
µA
IPP = 1A, tp = 8/20µs
6.5
V
VC
IPP = 5A, tp = 8/20µs
8
V
ESD Clamping Voltage2
VC
IPP = 4A,
tlp = 0.2/100ns
5.6
V
ESD Clamping Voltage2
VC
IPP = 16A,
tlp = 0.2/100ns
8.6
V
Dynamic Resistance2, 3
RDYN
tlp = 0.2 / 100ns
0.25
Ohms
Cj
I/O pin to Gnd
VR = 0V, f = 1MHz
5
Junction Capacitance
7
pF
Notes
1)ESD gun return path connected to ESD ground plane.
2)Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to
t2 = 90ns.
3) Dynamic resistance calculated from Ipp = 4A to Ipp = 16A
2015 Semtech Corporation
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uClamp3311T
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jypical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
10
1000
8
Clamping Voltage - VC (V)
Peak Pulse Power - P PP (W)
9
100
10
7
6
5
4
3
Waveform
Parameters:
tr = 8µs
td = 20µs
2
1
0
DR040412-40
1
0
0.1
1
10
Pulse Duration - tp (µs)
1
2
4
5
6
Peak Pulse Current - IPP (A)
Normalized Capacitance vs. Reverse Voltage
TLP Characteristic
25
1.6
Transmission Line Pulse Test
(TLP) Settings:
tp = 100ns, tr = 0.2ns,
ITLP and VTLP averaging window:
t1 = 70ns to t2 = 90ns
f = 1 MHz
1.4
20
TLP Current (A)
1.2
Cj(VR) / Cj(VR=0V)
3
100
1
0.8
0.6
0.4
15
10
5
0.2
0
0
0
0.5
1
1.5
2
2.5
Reverse Voltage - VR (V)
3
0
3.5
4
6
8
10
12
14
16
TLP Voltage (V)
ESD Clamping (+8kV Contact per IEC 61000-4-2)
ESD Clamping (-8kV Contact per IEC 61000-4-2)
50
0
Measured with 50 Ohm scope input
impedance, 2GHz bandwidth.
Corrected for 50 Ohm, 20dB
attenuator. ESD gun return path
connected to ESD ground plane
45
40
-5
-10
-15
Voltage (V)
35
Voltage (V)
2
30
25
20
-20
-25
-30
15
-35
10
-40
5
-45
0
Measured with 50 Ohm scope input
impedance, 2GHz bandwidth.
Corrected for 50 Ohm, 20dB
attenuator. ESD gun return path
connected to ESD ground plane
-50
-10
0
10
20
30
40
50
60
70
80
-10
Time (ns)
2015 Semtech Corporation
0
10
20
30
40
50
60
70
80
Time (ns)
3
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uClamp3311T
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zypical Characteristics
Typical Insertion Loss (S21)
CH1 S21
LOG
6 dB / REF 0 dB
1: -2.3215 dB
800 MHz
2: -2.5192 dB
900 MHz
0 dB
12
-6 dB
3
3: -3.0194 dB
981.928 MHz
4
5
-12 dB
4: -5.6822 dB
1.8 GHz
-18 dB
5: -12.905 dB
2.5 GHz
-24 dB
-30 dB
-36 dB
1
MHz
10
MHz
START . 030 MHz
100
MHz
3
1
GHz GHz
STOP 3000. 000000 MHz
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Device Connection Options
Device Schematic & Pin Configuration
The µClamp3311T is designed to protect one data line
operating up to 3.3 volts. It will present a high
impedance to the protected line up to 3.3 volts. It will
“turn on” when the line voltage exceeds 3.5 volts. The
device is bidirectional and may be used on lines where
the signal polarity is above and below ground. These
devices are not recommended for use on dc power
supply lines due to their snap-back voltage
characteristic.
2
1
Circuit Board Layout Recommendations for Suppression of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
l Place the TVS near the input terminals or connectors to restrict transient coupling.
l Minimize the path length between the TVS and the
protected line.
l Minimize all conductive loops including power and
ground loops.
l The ESD transient return path to ground should be
kept as short as possible.
l Never run critical signals near board edges.
l Use ground planes whenever possible.
2015 Semtech Corporation
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uClamp3311T
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Device Operation
Since the EPD TVS devices use a 4-layer structure,
they exhibit a slightly different IV characteristic curve
when compared to conventional devices. Figure 1
compares the IV characteristic curves of a low voltage
TVS with a working voltage (VRWM) of 3.3 volts to a
conventional device with a working voltage of 5 volts.
During normal operation, each device represents a
high-impedance to the circuit up to its working voltage.
During an ESD event, they will begin to conduct and
will enter a low impedance state. For the 3.3 volt
device, this happens when the punch-through voltage
(VPT) is exceeded. Unlike a conventional 5 volt device,
the low voltage TVS will exhibit a slight negative
resistance characteristic as it conducts current. This
characteristic aids in lowering the clamping voltage of
the device. However, the device can latch up if a DC
bias voltage is present. The reason being that in order
for the device to turn off, the voltage must fall below
the snap-back voltage (VSB). This value is normally a
minimum of 2.8 volts. If the device is biased above
the 2.8 volts, it will never fall below the snap-back
voltage and will therefore stay in a conducting state.
Conventional TVS diodes are silicon avalanche, p-n
junction devices designed to operate at voltages as
low as 5 volts. However, many of today's
semiconductor devices operate at voltages below 5
volts, and thus require lower voltage protection
devices. Unfortunately, for operating voltages below 5
volts, conventional TVS diode technology becomes
impractical. This is due to the adverse effects of high
leakage current and high capacitance caused by the
high impurity concentrations that are needed to lower
the device voltage below 5 volts. Semtech's
proprietary low voltage EPD device technology was
developed to provide protection for today's circuits
operating at voltages below 5 volts. Unlike
conventional TVS diodes, the EPD device utilizes a
complex four layer (n-p-p-n) structure. The
construction of these devices results in very low
operating voltage without the adverse effects
mentioned above.
0.05
Low Voltage TVS
Snap-Back Voltage (VSB): Minimum rated
voltage when the device is in a conducting
state measured at ISB = 50mA. This
voltage is less than the working voltage.
The voltage must fall below VSB for the
device to turn off.
Clamping Voltage (VC): Maximum voltage
drop across the device at a defined peak
pulse current (IPP). This is the voltage
seen by the protected circuit during a
transient event.
0.04
0.03
Semtech 3.3 Volt TVS
0.02
Current - I (A)
Punch-Through Voltage (VPT): Minimum
rated voltage at which the device will
become a low impedance (i.e. Minimum
Turn-On Voltage). When VPT is exceeded,
the device will conduct.
Semtech
5 Volt TVS
VSB
Working Voltage (VRWM): Maximum rated
operating voltage at which the device will
appear as a high impedance to the
protected circuit.
0.01
VPT
0
0
1
2
3
VRWM
-0.01
4
5
6
VRWM
7
8
9
10
VBR
-0.02
-0.03
Voltage - V (V)
Figure 1 - 3.3 volt vs. 5 volt TVS IV Curve
2015 Semtech Corporation
5
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uClamp3311T
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uClamp3311T Spice Model
uClamp3311T Spice Parameters
2015 Semtech Corporation
Parameter
Unit
D1 (T VS)
D2 (T VS)
IS
A mp
1E-20
1E-20
BV
Volt
2.8
2.8
VJ
Volt
0.7
0.7
RS
Ohm
0.2
0.2
IB V
A mp
1E-3
1E-3
CJO
Farad
10E-12
1E-12
TT
sec
2.541E-9
2.541E-9
M
--
0.05
0.05
N
--
1.1
1.1
EG
eV
1.11
1.11
6
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uClamp3311T
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SLP1006P2T
A
B
D
DIMENSIONS
INCHES
MILLIMETERS
DIM
MIN NOMMAX MIN NOMMAX
E
TOP VIEW
A
SEATING
PLANE
aaa C
C
A1
A
A1
b
D
E
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L
R
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aaa
bbb
.015 .016 .017
.000 .001 .002
.018 .020 .022
.035 .039 .043
.020 .024 .028
.026 BSC
.008 .010 .012
.002 .004 .006
2
.003
.004
0.37 0.40 0.43
0.00 0.03 0.05
0.45 0.50 0.55
0.90 1.00 1.10
0.50 0.60 0.70
0.65 BSC
0.20 0.25 0.30
0.05 0.10 0.15
2
0.08
0.10
PIN 1 ID
R
bxN
bbb
C A B
2x L
e
BOTTOM VIEW
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
ëåáì íattern - SLP1006P2T
DIMENSIONS
Y
(C)
DIM
C
G
X
Y
Z
Z
G
INCHES
(.033)
.012
.024
.022
.055
MILLIMETERS
(0.85)
0.30
0.60
0.55
1.40
X
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2015 Semtech Corporation
7
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uClamp3311T
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Notes:
1) Device is electrically symmetrical
2) Marking will also include line matrix date code
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Part Number
Qty per
Reel
Reel
Size
uClamp 3311T.TCT
3,000
7 Inch
uClamp 3311T.TN T
10,000
7 Inch
MicroClamp, uClamp and µClamp are trademarks of Semtech
Corporation
ape Specification
C
31
31
31
3
Pin 1 Location
(Towards Sprocket Holes)
Device Orientation in Tape
A0
0.69 +/-0.10 mm
B0
K0
1.19 +/-0.10 mm
0.66 +/-0.10 mm
Tape
Width
B, (Max)
D
D1
8 mm
4.2 mm
(.165)
1.5 + 0.1 mm
- 0.0 mm
(0.59 +.005
- .000)
0.4 mm
±0.25
(.031)
2015 Semtech Corporation
E
1.750±.10
mm
(.069±.004)
F
P
P0
P2
T
W
3.5±0.05
mm
(.138±.002)
4.0±0.10
mm
(.157±.004)
4.0±0.1
mm
(.157±.004)
2.0±0.05
mm
(.079±.002)
0.254±0.02
mm (.016)
8.0 mm
+ 0.3 mm
- 0.1 mm
(.312±.012)
8
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uClamp3311T
P P
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0,000 piece, 2mm Pitch Reel
1
Bo
Ao
Ko
31
31
0.55 +/-0.05 mm
31
1.15 +/-0.05 mm
K0
31
0.70 +/-0.05 mm
B0
31
A0
Note: All dimensions in mm unless otherwise specified
Pin 1 Location
(Towards Sprocket Holes)
Device Orientation in Tape
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Semtech Corporation
Protection Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
2015 Semtech Corporation
9
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