1617-35

R.1.A.990106-HERIC 1617-35 35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz ADVANCED ISSUE GENERAL DESCRIPTION The 1617-35 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1540 – 1660 MHz. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life. CASE OUTLINE 55AT ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25°C 290 Maximum Voltage and Current 50 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 3.0 6 Collector Current (Ic) Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1660 MHz Vcc = 28 Volts PW = Note 1 DF = Note 1 F = 1540 MHz MIN 35 6 7.6 50 10:1 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 20 mA Ic = 60 mA Vce = 5V, Ic = 500mA 3.0 50 20 0.6 V V °C/W NOTE 1: 5 µs at 15% Duty 2. At rated pulse conditions . Initial Issue May 1999 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120