2223-1.7

2223-1.7 1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz GENERAL DESCRIPTION The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes input prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder sealed package. CASE OUTLINE 55LV, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 7 Watts 45 Volts 3.5 Volts .25 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F =2.2 - 2.3 GHz Vcc = 24 Volts MIN 1.7 .25 8.3 35 10:1 TYP MAX UNITS Watts Watts dB % BVces BVebo Hfe Cob θjc Collector to Base Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance Ic = 10 mA Ie = 2 mA Vce = 5 V, Ic = 160mA Vcb = 28V, 1MHz Tc = 25 oC 40 3.5 10 Volts Volts 100 24 o pF C/W Issue A June 1997 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 2223-1.7 August 1996