23A003

23A003 0.3 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The23A003 is a COMMON EMITTER transistor capable of providing 0.3 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package. CASE OUTLINE 55BT, STYLE 2 B08 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 3.0 Watts 50 Volts 3.5 Volts 0.3 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg Ft VSWR CHARACTERISTICS Power Out Power Input Power Gain Transition Frequency Load Mismatch Tolerance TEST CONDITIONS F = 2.3 GHz Ic = 100 mA Vcc = 15 Volts Vce = 15V, Ic =100 mA MIN 0.3 0.03 10.0 4.2 11.0 4.5 10:1 TYP MAX UNITS Watts Watts dB GHz BVebo BVces BVceo hF E Cob θjc Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC Current Gain Capacitance Thermal Resistance Ie = 2 mA Ic = 20 mA Ic = 20 mA Vce = 5 V, Ic = 100 mA Vcb = 20V, f = 1 MHz 3.5 50 20 20 2.5 45 Volts Volts Volts pF C/W o Initial Issue November 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120