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UTV005

UTV005

  • 厂商:

    GHZTECH

  • 封装:

  • 描述:

    UTV005 - COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V - GHz Te...

  • 数据手册
  • 价格&库存
UTV005 数据手册
UTV005 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION The UTV 005 is a COMMON EMITTER transistor capable of providing 0.5 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness. CASE OUTLINE 55FT, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 8.0 Watts 45 Volts 3.5 Volts 4 Volts 0.75 Amps - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg IMD1 VSWR1 CHARACTERISTICS Power Out - Pk Sync Power Input Power Gain Intermodulation Distortion Load Mismatch Tolerance TEST CONDITIONS F = 470 - 860 MHz Vcc = 20 Volts Ic = 220 mA Pref = 0.5 Watts F = 860 MHz MIN 0.5 .05 11 -60 30:1 TYP MAX UNITS Watts Watts dB dB BVceo BVces BVebo hFE Cob θjc Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance Ic = 20 mA Ic = 10 mA Ie = 1 mA Vce = 5 V, 100 mA Vcb = 20 V, F = 1 MHz Tc = 25oC 24 45 3.5 20 5.0 22 Volts Volts Volts pF C/W o Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 MHz European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 UTV005 August 1996 UTV005 Vbe C11 C10 RL1 C9 C12 RL2 Vce C14 L8 C7 C15 C8 L7 C13 L1 C1 L2 L3 C3 C4 L4 L5 L6 C2 C5 C6 BIAS CIRCUIT Vcc C1 R1 CR1 Q1 R2 R4 Vbe R3 Vcc L1=.435" X .150" L2=.435" X 1.1480" L3=.270" X .300" L4=.300" X .310" L5=1.525" X .150" L6=.365" X .150" L7=.4 mH Molded Inc. L8=4T, .91" 1D 24 AWG. August 1996 C1=8.2 pF ATC C2,C3=.8-8 pF adj C4=6.2 pF ATC C5=.6-6pF adj C6=1pF ATC C7=22pF ATC C8,C13=220 pF ATC C9,C12=390 pF ATC C10,C14=1 mF Tantalum C11,C15=10 MF, 50V Electro RL1,RL2=5 turns #2 gauge wire on a 0.125" toroid in parallel with a 1W, 15 OHM resistor. C1=100 MF, 50 V Electrolytic R1=500 OHM Pot R2=4.7 KOHM, 1/4 W R3= 47 OHM 1/4 W R4=1 OHM, 3 Watt, 1% CR1=IN4148 Q1=MJE172
UTV005 价格&库存

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