UTV200

UTV120 12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION The UTV 120 is a COMMON EMITTER transistor capable of providing 12 Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness. CASE OUTLINE 55JT, STYLE 2 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 80 Watts 45 Volts 28 Volts 4 Volts 3.5 Amps - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg IMD1 VSWR1 CHARACTERISTICS Power Out - Pk Sync Power Input Power Gain Intermodulation Distortion Load Mismatch Tolerance TEST CONDITIONS F = 470 - 860 MHz Vcc = 26.5 Volts Ic = 1.7 Amps Pref = 12 Watts F = 860 MHz MIN 12 1.55 8.9 9.5 -52 3:1 TYP MAX UNITS Watts Watts dB dB Collector to Emitter 28 Ic = 65 mA Breakdown 45 Ic = 25 mA Collector to Base Breakdown 4 Ie = 10 mA Emitter to Base Breakdown 10 Vce = 5 V, 500 mA Current Gain Vcb = 26 V, F = 1 Output Capacitance MHz Thermal Resistance Tc = 25oC Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB Note 2: Per side Initial Issue June, 1994 LVceo2 BVces2 BVebo2 hFE2 Cob2 θjc Volts Volts Volts 23 1.6 o pF C/W GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 UTV120 G Hz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 UTV-120 Vbe 2 C5 + C24 C5 Vce 1 C28 + C8 C14 + C15 L3 L5 L7 + C16 C8 L1 C2 T1 L3 C20 T3 C22 R1 C1 T2 50 OHM RF IN C3 C4 C6 L6 Q1 C9 C13 C19 C21 L8 L4 C23 T4 L5 L2 C7 ++ C25 C26 C10 50 OHM RF OUT C12 + C18 + C17 C29 C30 Vbe 1 Vce 2 CAPACITORS C1,C6=4.7 pF ATC series A C2,C3,C20,C21=33 pF ATC series A C4,C9=1.2-3.5 pF film diel. trimmer C5,C7,C11,C12=0.01 mF, 50V Tantalum C8,C15,C17,C25=1 mF, 50 V Tantalum C10,C16,C27,C12=0.1 mF 50 V disc ceramic C13=0.6-6 pF piston trimmer C19=0.35-3.5 pF piston trimmer C18,C24,C14,C26=10 mF, 50 V C28,C30=0.001 mF, 50 V disc ceramic C31=100 mF, 50 V electrolytic BIAS CIRCUIT R2 + C31 Q2 R3 R4 Vce 1 CR2 R5 R7 R9 Vbe 2 R6 R8 Vce 2 Q3 DIODES CR1,CR2=IN4148 CR1 INDUCTORS L1,L2=0.46 microHenry molded L3,L4=1 turn #18 magnet wire on a 0.325" form TRANSISTORS Q1=GHz UTV-120 Q2,Q3=MJE172 TRANSFORMERS T1,T2,T3,T4=50 Ohm semi-rigid coax cable (0.056" X 1.1") soldered to 0.035" X 1.1" microstrip August 1996 Vbe 1 RESISTORS R1=10 Ohm, 1/2 W Carbon R2,R6=500 Ohm potentiometer R3,R7=4.7K Ohm, 3W, 1% Carbon R4,R8=1 Ohm, 3W, 1% Carbon film R5,R9=47 Ohm, 1/4W Carbon film MICROSTRIPLINES L3,L4=0.075" X 0.65" L5,L6=0.120" X 0.31" L7,L8=0.120" X 1.33"