VMIL 100
100 Watts, 28 Volts, Class AB Defcom 100 - 200 MHz GENERAL DESCRIPTION
The VMIL100 is an input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-200 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure ruggedness and high reliability.
CASE OUTLINE
55HV, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emiter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 270 Watts 65 Volts 4.0 Volts 20 A - 65 to +150 oC +150 oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg ηc VSWR CHARACTERISTICS Power Output Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 175 MHz Vcc = 28 Volts MIN 100 7.0 Po=100W, F=175 MHz 14 8.5 60 20 TYP MAX UNITS Watts Watts dB %
30:1
BVebo BVces BVceo Cob hFE θjc
Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown Output Capacitance DC - Current Gain Thermal Resistance
Ie = 5 mA Ic = 100 mA Ie = 50 mA Vcb = 28 V, F = 1 MHz Vce = 5 V, Ic = 1 A
4.0 65 33 220 10 .65
Volts Volts Volts pF
o
C/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
VMIL100
August 1996
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