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GHB-0805DU-R2

GHB-0805DU-R2

  • 厂商:

    GILWAY

  • 封装:

  • 描述:

    GHB-0805DU-R2 - These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material te...

  • 数据手册
  • 价格&库存
GHB-0805DU-R2 数据手册
55 Commerce Way Woburn, MA 01801 (781) 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU-R2 DIFFUSED EPOXY 0.3 (0.012) PC BOARD LED DIE CATHODE MARK 1.25 (0.049) 2.0 (0.079Ê) 0.62 (0.024) 1.4 (0.055) POLARITY CATHODE LINE 0.4 ± 0.15 (0.016 ± 0.006) 0.8 (0.031) 0.3 (0.012) 0.4 ± 0.15 (0.016 ± 0.006) Description These chip-type LEDs utilize Aluminum Indium Gallium Phosphide (AlInGaP) material technology. The AlInGaP material has a very high luminous efficiency, capable of producing high light output over a wide range of drive currents. The available colors in this surface mount series are 592 nm Amber, 605 nm Orange, 626 nm Red for AS AlInGaP and 631 nm red for TS AlInGaP. SOLDERING TERMINAL Device Selection Guide Footprint (mm)[1,2] AS AlInGaP Amber AS AlInGaP Orange AS AlInGaP Red TS AlInGaP Red GHB0805DU-R2 Package Description Untinted, Diffused 2.0 x 1.25 x 0.8 GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R Notes: 1. Dimensions in mm. 2. Tolerance ± 0.1 mm unless otherwise noted. T Absolute Maximum Ratings ° A = 25C GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R [1,2] Parameter DC Forward Current Power Dissipation Reverse Voltage (I m R = 100 A) LED Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature GHB-0805DU-R2 30 81 5 95 Ð30 to +85 Ð40 to +85 See IR soldering profile (Figure 7) Units mA mW V °C °C °C 30 75 5 95 Ð30 to +85 Ð40 to +85 Notes: 1. Derate linearly as shown in Figure 4. 2. Drive currents above 5 mA are recommended for best long term performance. Electrical Characteristics ° TA = 25C Forward Voltage VF (Volts) @ I = 20 mA F Typ. Max. 1.9 1.9 1.9 2.2 2.4 2.4 2.4 2.6 Reverse Breakdown V R (Volts) @RI = 100 A m Min. 5 5 5 5 Capacitance C (pF), VF = 0, f = 1 MHz Typ. 45 45 45 35 Thermal Resistance R J-PIN = ° q (C/W) Typ. 300 300 300 300 Parameter Number GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU-R2 Optical Characteristics ° TA = 25C Luminous Intensity I v (mcd) [1] @ 20 mA Min. Typ. 25 25 25 40 90 90 90 165 Peak Wavelength lpeak (nm) Typ. 595 609 637 643 Color, Dominant Wavelength ld[2] (nm) Typ. 592 605 626 631 Viewing Luminous Angle Efficacy 2 q1/2 hv Degrees[3] (lm/w) Typ. Typ. 170 170 170 170 480 370 155 122 Part Number GHB-0805DU-Y GHB-0805DU-O GHB-0805DU-R GHB-0805DU-R2 Color AS Amber AS Orange AS Red TS Red Notes: 1. The luminous intensity, I v, is measured at the peak of the spatial radiation pattern which may not be aligned with the mechanical axis of the lamp package. 2. The dominant wavelength, ld , is derived from the CIE Chromaticity Diagram and represents the perceived color of the device. 3. q 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity. 1.0 IF Ð FORWARD CURRENT Ð mA 100 AS AlInGaP AMBER RS AlInGaP AED AS AlInGaP RELATIVE INTENSITY AS AlInGaP ORANGE 0.5 TS AlInGaP RED 10 1 TS AlInGaP 0 500 550 600 650 700 750 0.1 1.5 1.7 1.9 2.1 2.3 2.5 WAVELENGTH Ð nm IF MAX. Ð MAXIMUM FORWARD CURRENT Ð mA V F Ð FORWARD VOLTAGE Ð V 1.4 1.2 LUMINOUS INTENSITY (NORMALIZED AT 20 mA) 35 30 25 20 RqJ-A = 800¡C/W 15 RqJ-A = 600¡C/W 10 5 0 0 20 40 60 80 100 RqJ-A = 500¡C/W 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 IF Ð FORWARD CURRENT Ð mA 1.00 0.90 RELATIVE INTENSITY TA Ð AMBIENT TEMPERATURE Ð ¡C 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 ANGLE 1.2 (0.047) 1.2 (0.047) 1.2 (0.047) 0.9 (0.035) Recommended soldering pattern for GHB-0805DU-Y/O/R/R2
GHB-0805DU-R2 价格&库存

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