G1422F2UF

G1422F2UF

  • 厂商:

    GMT(致新科技)

  • 封装:

  • 描述:

    G1422F2UF - 2W Stereo Audio Amplifier - Global Mixed-mode Technology Inc

  • 详情介绍
  • 数据手册
  • 价格&库存
G1422F2UF 数据手册
Global Mixed-mode Technology Inc. G1422 2W Stereo Audio Amplifier Features Depop Circuitry Integrated Output Power at 1% THD+N, VDD=5V --2W/CH (typical) into a 4Ω Load --1.2W/CH (typical) into a 8Ω Load Bridge-Tied Load (BTL), Single-Ended (SE) Shutdown Control Available Thermal protection Surface-Mount Power Package 20-Pin TSSOP-P General Description The G1422 is a stereo audio power amplifier in 20pin TSSOP thermal pad package. It can drive 2W continuous RMS power into 4Ω load per channel in Bridge-Tied Load (BTL) mode at 5V supply voltage. Its THD is smaller than 1% under the above operation condition. To simplify the audio system design in the notebook application, the G1422 supports the BridgeTied Load (BTL) mode for driving the speakers, Single-End (SE) mode for driving the headphone. For the low current consumption applications, the SHDN mode is supported to disable the G1422 when it is idle. The current consumption can be further reduced to below 2µA. Applications Stereo Power Amplifiers for Notebooks or Desktop Computers Multimedia Monitors Stereo Power Amplifiers for Portable Audio Systems Ordering Information ORDER NUMBER G1422F2U Note:F2: TSSOP-20 (FD) U: Tape & Reel ORDER NUMBER (Pb free) G1422F2Uf MARKING G1422 TEMP. RANGE -40°C to +85°C PACKAGE TSSOP-20 (FD) Pin Configuration G1422 SHUTDOWN GND/HS +OUTA VDD -OUTA -INA GND/HS +INA GND/HS 1 2 3 4 5 6 7 8 9 19 18 17 16 15 14 13 12 HP-IN 20 HP-IN GND/HS +OUTB VDD -OUTB -INB BYPASS +INB GND/HS Thermal Pad GND/HS 10 11 GND/HS Top View TSSOP-20 (FD) Bottom View Note: Recommend connecting the Thermal Pad to the GND for excellent power dissipation. Ver: 1.2 Jun 29, 2005 TEL: 886-3-5788833 http://www.gmt.com.tw 1 Global Mixed-mode Technology Inc. Absolute Maximum Ratings Supply Voltage, VCC…………………..…...…….……...6V Operating Ambient Temperature Range TA…….…………………………….……….-40°C to +85°C Maximum Junction Temperature, TJ…..……….….150°C Storage Temperature Range, TSTG….…-65°C to+150°C Reflow Temperature (soldering, 10sec)….……..260°C G1422 Power Dissipation (1) TA ≤ 25°C………………………………………….2.7W TA ≤ 70°C………………………………………….1.7W TA ≤ 85°C………………….………………………1.4W Electrostatic Discharge, VESD Human body mode..………………….…-3000 to 3000(2) Note: (1) (2) : Recommended PCB Layout : Human body model : C = 100pF, R = 1500Ω, 3 positive pulses plus 3 negative pulses Electrical Characteristics DC Electrical Characteristics, VDD = 5.0V, TA=+25°C, unless otherwise noted PARAMETER Supply Current DC Differential Output Voltage IDD in Shutdown Headphone High Input Voltage Headphone Low Input Voltage SYMBOL IDD VO(DIFF) ISD VIH VIL VDD = 5V CONDITION Stereo BTL STEREO SE VDD = 5V,Gain = 2 VDD = 5V MIN --------4 --- TYP 8.5 4 5 0.1 ----- MAX 15 8 50 2 --0.8 UNIT mA mV µA V V (AC Operation Characteristics, VDD = 5.0V, TA=+25°C, RL = 4Ω, unless otherwise noted) PARAMETER SYMBOL CONDITION THD = 1%, BTL, RL = 4Ω THD = 1%, BTL, RL = 8Ω THD = 10%, BTL, RL = 4Ω Output power (each channel) see Note P(OUT) THD = 10%, BTL, RL = 8Ω THD = 1%, SE, RL = 4Ω THD = 1%, SE, RL = 8Ω THD = 10%, SE, RL = 4Ω THD = 10%, SE, RL L = 8Ω THD = 0.5%, SE, RL = 32Ω PO = 1.6W, BTL, RL = 4Ω Total harmonic distortion plus noise THD+N PO = 1W, BTL, RL = 8Ω PO = 75mW, SE, RL = 32Ω VI = 1V, RL = 10KΩ, G = 1, SE G = 1, THD = 1% RL = 4Ω, Open Load f = 120Hz f = 1kHz MIN --------------------------------------------- TYP 2 1.25 2.5 1.6 550 340 700 440 92 300 100 15 2.5 20 65 75 80 80 85 2 90 55 MAX --------------------------------------------- UNIT W mW m% Maximum output power bandwidth Phase margin Power supply ripple rejection Channel-to-channel output separation Input separation BTL attenuation in SE mode Input impedance Signal-to-noise ratio Output noise voltage BOM PSRR kHz ° dB dB dB dB MΩ dB µV (rms) ZI Vn PO = 500mW, BTL Output noise voltage Note :Output power is measured at the output terminals of the IC at 1kHz. Ver: 1.2 Jun 29, 2005 TEL: 886-3-5788833 http://www.gmt.com.tw 2 Global Mixed-mode Technology Inc. Typical Characteristics Table of Graphs G1422 FIGURE 2,4,6,9,11,15,17 1,3,5,7,8,10,12,13,14,16,18 20 19 22,23 21 24 25,26 27,28 29,30,31,32 THD +N Total harmonic distortion plus noise Output noise voltage Vn Supply ripple rejection ratio Crosstalk Open loop response IDD PO PD Supply current Output power Power dissipation vs Frequency vs Output Power vs Frequency vs Frequency vs Frequency vs Frequency Vs Supply Voltage vs Load Resistance Vs Load Resistance vs Output Power Total Harmonic Distortion Plus Noise vs Output Power 10 5 10 5 Total Harmonic Distortion Plus Noise vs Frequency 20kHz 2 1 0.5 % 0.2 0.1 0.05 2 1 Po=1.8W 1kHz % 0.5 0.2 20 Hz 0.02 0.01 3m VDD=5V RL=3Ω BTL Av=-2V/V 20m 50m 100m W 200m 500m 1 2 3 0.1 0.05 0.02 0.01 20 VDD=5V RL=3Ω BTL Av=-2V/V 50 100 200 500 Hz 1k 2k 5k 10k 20k 5m 10m Figure 1 Figure 2 Total Harmonic Distortion Plus Noise vs Output Power 10 5 10 5 Total Harmonic Distortion Plus Noise vs Frequency Av=-4V/V Av=-2V/V 20kHz 2 1 0.5 % 0.2 0.1 0.05 2 1 1kHz % 0.5 0.2 20 Hz 0.02 0.01 3m VDD=5V RL=4Ω BTL Av=-2V/V 10m 20m 50m 100m W 200m 500m 1 2 3 0.1 0.05 Av=-1V/V 0.02 0.01 20 VDD=5V RL=4Ω BTL Po=2W 200 500 Hz 1k 2k 5k 10k 20k 5m 50 100 Figure 3 Figure 4 Ver: 1.2 Jun 29, 2005 TEL: 886-3-5788833 http://www.gmt.com.tw 3 Global Mixed-mode Technology Inc. Total Harmonic Distortion Plus Noise vs Output Power 10 5 10 G1422 Total Harmonic Distortion Plus Noise vs Frequency 20kHz 2 1 0.5 % 0.2 0.1 0.05 VDD=5V RL=8Ω BTL Av=-2V/V 5 2 1 0.5 VDD=5V RL=8Ω BTL Po=1W Av=-4V/V 1kHz % 0.2 0.1 Av=-2V/V 20 Hz 0.05 0.02 0.01 2m 0.02 0.01 20 Av=-1V/V 50 100 200 500 Hz 1k 2k 5k 10k 20k 5m 10m 20m 50m W 100m 200m 500m 1 2 Figure 5 Figure 6 Total Harmonic Distortion Plus Noise vs Output Power 10 5 10 Total Harmonic Distortion Plus Noise vs Frequency 5 2 1 0.5 % 0.2 0.1 0.05 20kHz VDD=5V RL=32Ω BTL Av=-2V/V 20kH 2 1 0.5 % 0.2 1kHz 1kHz 0.1 0.05 0.02 0.01 1m 20 Hz 2m 5m 10m 20m W 50m 100m 200m 500m 1 0.02 0.01 1m VDD=3.3V RL=4Ω BTL Av=-2V/V 2m 5m 10m 20 Hz 20m W 50m 100m 200m 500m 1 Figure 7 Figure 8 Total Harmonic Distortion Plus Noise vs Frequency 10 5 10 Total Harmonic Distortion Plus Noise vs Output Power 5 2 1 0.5 % 0.2 0.1 0.05 VDD=3.3V RL=4Ω BTL Po=0.75W Av=-4V/V 2 1 0.5 20kHz Av=-2V/V % 0.2 0.1 0.05 1kHz 0.02 0.01 20 Av=-1V/V 50 100 200 500 Hz 1k 2k 5k 10k 20k 0.02 0.01 1m VDD=3.3V RL=8Ω BTL Av=-2V/V 2m 5m 10m 20 Hz 20m W 50m 100m 200m 500m 1 Figure 9 Figure 10 Ver: 1.2 Jun 29, 2005 TEL: 886-3-5788833 http://www.gmt.com.tw 4 Global Mixed-mode Technology Inc. G1422 Total Harmonic Distortion Plus Noise vs Output Power Total Harmonic Distortion Plus Noise vs Frequency 10 5 10 2 1 0.5 % 0.2 0.1 0.05 VDD=3.3V RL=8Ω BTL Po=0.45W 5 2 20kHz Av=-4V/V % 1 0.5 VDD=5V RL=4Ω SE Av=-2V/V 0.2 1kHz Av=-2V/V 0.1 0.05 0.02 0.01 20 Av=-1V/V 50 100 200 500 Hz 1k 2k 5k 10k 20k 0.02 100Hz 2m 5m 10m 20m W 50m 100m 200m 500m 1 0.01 1m Figure 11 Figure 12 Total Harmonic Distortion Plus Noise vs Output Power 10 5 10 Total Harmonic Distortion Plus Noise vs Output Power 5 2 1 0.5 % 0.2 0.1 0.05 VDD=5V RL=8Ω SE Av=-2V/V 20kHz % 2 1 0.5 VDD=5V RL=16Ω SE Av=-2V/V 20kHz 0.2 1kHz 0.1 0.05 20 Hz 1kHz 2m 5m 10m 20m W 50m 100m 200m 500m 0.02 100kHz 2m 5m 10m 20m W 50m 100m 200m 500m 1 0.02 0.01 1m 0.01 1m Figure 13 Figure 14 Total Harmonic Distortion Plus Noise vs Frequency 10 5 10 5 Total Harmonic Distortion Plus Noise vs Output Power VDD=5V RL=32Ω SE Av=-2V/V 20kHz 2 1 0.5 % 0.2 0.1 0.05 VDD=5V RL=16Ω SE Po=150mW Av=-4V/V % 2 1 0.5 0.2 0.1 0.05 Av=-2V/V 1kHz 20 Hz 0.02 0.01 20 Av=-1V/V 50 100 200 500 Hz 1k 2k 5k 10k 20k 0.02 0.01 1m 2m 5m 10m 20m W 50m 100m 200m 500m 1 Figure 15 Figure 16 Ver: 1.2 Jun 29, 2005 TEL: 886-3-5788833 http://www.gmt.com.tw 5 Global Mixed-mode Technology Inc. Total Harmonic Distortion Plus Noise vs Frequency 10 5 2 1 0.5 0.2 % 0.1 0.05 0.02 0.01 0 .005 0 .002 0 .001 20 50 100 200 50 0 Hz 1k 2k 5k 10k 20 k % 10 G1422 VDD=3.3V RL=32Ω SE A v=-2V/V Total Harmonic Distortion Plus Noise vs Output Power 5 2 1 VDD=5V RL=32Ω SE Po=75mW A v=-4V/V 0.5 0.2 0.1 0.05 0.02 0.01 20kHz A v=-2V/V 20 Hz 1kHz A v=-1V/V 0.005 0.002 0.001 1m 2m 5m 10 m W 2 0m 5 0m 100m Figure 17 Figure 18 Supply Ripple Rejection Ratio vs Frequency +0 -10 -20 -30 -40 d B -50 -60 -70 -80 -90 -100 20 V Output Noise Voltage vs Frequency 100u 90u 80u 70u 60u 50u 40u T VDD=5V RL=4Ω CB=4.7µF Vripple=0.5Vpp VDD=5V RL=4Ω BTL Mode 20kHz LP 30u SE Mode 20u VDD=5V RL=32Ω SE Mode BW
G1422F2UF
物料型号: - 型号:G1422 - 封装:TSSOP-20 (FD)

器件简介: - G1422是一款立体声音频功率放大器,采用20引脚TSSOP热垫包装。在5V供电电压下,每声道可连续输出2W RMS功率至4Ω负载。在上述工作条件下,其总谐波失真(THD)小于1%。支持桥接负载(BTL)模式和单端(SE)模式,适用于笔记本或台式电脑、多媒体监视器、便携式音频系统的立体声功率放大器。

引脚分配: - 1 SHUTDOWN:关机模式控制信号输入。 - 2,7,9,10,11,12,19 GND/HS:电路接地连接。 - 3 +OUTA:BTL模式下A通道正输出,在SE模式下为高阻态。 - 4,17 VDD:电路供电电压。 - 5 -OUTA:BTL模式下A通道负输出,在SE模式下为输出。 - 6 -INA:A通道输入信号I。 - 8 +INA:OPAMP的A通道正输入。 - 13 +INB:OPAMP的B通道正输入。 - 14 BYPASS:连接至内部中供电电压分压器。 - 15 -INB:B通道输入信号I。 - 16 -OUTB:BTL模式下B通道负输出,在SE模式下为输出。 - 18 +OUTB:BTL模式下B通道正输出,在SE模式下为高阻态。 - 20 HP-IN:模式控制信号输入,低电平为BTL模式,高电平为SE模式。

参数特性: - 电源电流:4mA至15mA。 - 在5V供电下,BTL模式下4Ω负载的输出功率为2W,8Ω负载为1.25W。 - 待机模式下功耗小于2µA。 - 耳机高输入电压:4V。 - 耳机低输入电压:0.8V。

功能详解: - 支持BTL和SE模式,适用于不同的音频输出需求。 - 待机模式下可大幅降低功耗,适用于电池供电产品。 - 集成的去爆音电路,减少启动和唤醒时的噪音。

应用信息: - 适用于笔记本或台式电脑、多媒体监视器、便携式音频系统的立体声功率放大器。
G1422F2UF 价格&库存

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