GS2N7002KW

GS2N7002KW 60V N-Channel MOSFET Main Product Characteristics VDS 60V RDS(ON) 2.5Ω ID D D G S 340mA G Features and Benefits § S SOT-323 Schematic Diagram Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GS2N7002KW utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous(TA=25°C) ID Drain Current-Continuous(TA=70°C) 340 272 mA Drain Current-Pulsed1 IDM 1.5 A Power Dissipation(TA=25°C) PD 350 mW Thermal Resistance, Junction-to-Ambient2 RθJA 357 °C/W Storage Temperature Range TSTG -55 To +150 °C TJ -55 To +150 °C Operating Junction Temperature Range 1/5 GS2N7002KW 60V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter unless otherwise specified) Symbol Conditions Min. Typ. Max. Unit Static Parameter Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS= 60V, VGS=0V - - 1 μA IGSS1 VGS= ±20V, VDS=0V - - ±9 μA IGSS2 VGS= ±10V, VDS=0V - - ±200 nA IGSS3 VGS= ±5V, VDS=0V - - ±100 nA VDS=VGS, ID=250μA 1 1.4 2.5 V VGS= 10V, ID=300mA - 1.3 2.5 VGS=4.5V, ID=200mA - 1.4 3 IS=300mA,VGS=0V - - 1.2 V - - - 340 mA - 18 - PF - 12 - PF - 7 - PF - 1.7 2.4 nC - 5 - - 17 - - 30 - Gate-Body Leakage Current Gate Threshold Voltage VGS(th) Static Drain-Source On-State Resistance RDS(ON) Diode Forward Voltage Maximum Body-Diode Continuous Current VSD IS Ω Dynamic Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS= 30V, VGS=0V, F=1.0MHz Switching Characteristics Total Gate Charge Qg Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Reverse Recovery Time trr VDS= 30V, ID=0.3A, VGS=10V VDD=30V, ID=300mA, VGS=10V,RGEN=6Ω VGS=0V, IS=300mA,VR=25V, dIS/dt=-100A/μs Note: 1. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 2/5 nS nS GS2N7002KW 60V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Characteristics Figure 4. Gate Charge Figure 5. Drain-Source on Resistance Figure 6. Drain-Source on Resistance 3/5 GS2N7002KW 60V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 8. Switching Wave Figure 7. Safe Operation Area 4/5 GS2N7002KW 60V N-Channel MOSFET Package Outline Dimensions (SOT-323) Recommended Pad Layout (Unit: mm) www.goodarksemi.com 5/5 Doc.USGS2N7002KWxSY2.0 Sep.2019