GSBC817-40W

GSBC817W NPN Transistor Features 3  High collector current  SOT-323 plastic package 2  For General AF Applications 1  High Current Gain  Low Collector-Emitter Saturation Voltage SOT-323 1. BASE 2. EMITTER Absolute Maximum Ratings 3.. COLLECTOR (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous IC 0.5 A Collector Power Dissipation PC 0.2 W RθJA 625 °C/W TJ -55 to +150 °C TSTG -55 to +150 °C Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range h FE(1) Classifications hFE Classifications Symbol hFE Range Marking GSBC817-16W GSBC817-25W 160 to 400 100 to 250 6B 6A 1/4 GSBC817-40W 250 to 600 6C GSBC817W NPN Transistor Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=10μA,IE=0 50 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA,IB=0 45 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1μA,IC=0 5 - - V Collector Cut-off Current ICBO VCB=20V,IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V,IC=0 - - 0.1 μA hFE(1) VCE=1V,IC=100mA 100 - 600 hFE(2) VCE=1V,IC=500mA 40 - - Collector-Emitter Saturation Voltage VCE(sat) IC=500mA,IB=50mA - - 0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA,IB=50mA - - 1.2 V Base-Emitter Voltage VBE(ON) VCE=1V,IC= 500mA - - 1.2 V Transition Frequency fT VCE=5V,IC=10mA,f=100MHz 100 - - MHz Collector Output Capacitance Cob VCB=10V,f=1MHz - - 5 pF DC Current Gain Typical Characteristic Curves (TA=25°C unless otherwise specified) 250 1000 0.80mA 0.72mA 200 hFE 0.56mA 150 DC CURRENT GAIN COLLECTOR CURRENT Ta=100℃ 0.64mA IC (mA) COMMON EMITTER Ta=25℃ 0.48mA 0.40mA 100 0.32mA 0.24mA 50 0 0.0 Ta=25℃ 100 0.16mA IB=0.08mA 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE 2.5 3.0 3.5 VCE (V) COMMON EMITTER VCE= 1V 10 0.5 1 10 100 COLLECTOR CURRENT Static Characteristic hFE 2/4 —— IC IC (mA) 500 GSBC817W NPN Transistor Typical Characteristic Curves (TA=25°C unless otherwise specified) 1000 1200 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 900 600 Ta=25℃ Ta=100 ℃ 300 0.1 1 10 COLLECTOR CURREMT VBEsat —— IC Ta=25℃ 1 10 100 COLLECTOR CURREMT (mA) IC VCEsat IC 500 (mA) —— IC 1000 500 (MHz) COMMON EMITTER VCE=1V 100 TRANSITION FREQUENCY 10 T =2 5℃ a T= a 10 0℃ COLLECTOR CURRENT IC fT (mA) Ta=100 ℃ 10 0.1 500 100 100 1 100 10 COMMON EMITTER VCE= 5V Ta=25℃ 0.1 300 600 900 1 0.69 1200 1 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) IC —— fT VBE COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ 100 Cib C (pF) f=1MHz IE=0/IC=0 CAPACITANCE 100 (mA) IC 250 1000 10 Cob 1 0.1 0.1 —— IC 200 150 100 50 0 1 10 REVERSE VOLTAGE Cob/Cib —— V 30 (V) 0 25 50 75 PC VCB/VEB 3/4 100 AMBIENT TEMPERATURE —— Ta Ta 125 (℃ ) 150 GSBC817W NPN Transistor Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.400 0.250 0.080 2.200 1.800 1.150 1.350 2.100 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.460 0.260 0° 8° Suggested Pad Layout (SOT-323) Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.016 0.003 0.010 0.087 0.071 0.045 0.053 0.083 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Recommended Pad Layout www.goodarksemi.com 4/4 Doc.USGSBC817WxSY2.1 Apr.2022