GSBC857CW

GSBC857xW PNP Transistor Feature 3  Power dissipation of 150mW  Ideally suited for automatic insertion  For switching and AF amplifier applications 1. BASE 2 2. EMITTER 3.. COLLECTOR 1 SOT-323 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Base Voltage VCBO -50 V Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5 V Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 to 150 °C Thermal Resistance from Junction to Ambient RθJA 833 °C/W Electrical Characteristics (TJ=25°C Parameter unless otherwise specified) Symbol Test Condition Collector - Base Breakdown Voltage V(BR)CBO Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current DC Current Gain Value Unit Min Max IC=-10uA, IE=0 -50 - V V(BR)CEO IC=-10mA, IB=0 -45 - V V(BR)EBO IE=-1uA, IC=0 -5 - V ICBO VCB=-30V, IE=0 - -15 nA GSBC857AW 125 250 GSBC857BW 220 475 GSBC857CW 420 800 hFE VCE=-5V IC=- 2mA Collector - Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-5mA - -0.65 V Base - Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-5mA - -1.1 V fT VCE=-5V, IC=-10mA, F=100MHz 100 - MHz Cob VCB=-10V, F=1MHz - 4.5 pF Transition Frequency Collector Output Capacitance 1/4 GSBC857xW PNP Transistor hFE, DC Current Gain IC, Collector Current (mA) Typical Characteristic Curves VCE, Collector-Emitter Voltage (V) Figure 1. Static Characteristic Figure 2. DC Current Gain vs. Collector Current VBEsat, Base-Emitter Saturation Volatge (mV) VCEsat, Collector-Emitter Saturation Volatge (V) IC, Collector Current (mA) IC, Collector Current (mA) Figure 3. Base Emitter Saturation Voltage vs. IC Figure 4. Collector Emitter Saturation Voltage vs. IC C, Capacitance (pF) PC, Collector Power Dissipation (mW) IC, Collector Current (mA) VR, Reverse Voltage (V) TA, Ambient Temperature (°C) Figure 5. Capacitance Characteristics Figure 6. Power Derating 2/4 GSBC857xW PNP Transistor Package Outline Dimensions Symbol A SOT-323 Dimensions in Milimeters Dimensions in Inches Min Max Min Max 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 0.650 TYP 1.200 L 0.026 TYP 1.400 0.047 0.525 REF 0.055 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° Recommended Pad Layout Note: 1. Controlling dimension: in millimeters. 2. General tolerance: ±0.05mm. 3. The pad layout is for reference purposes only. 3/4 GSBC857xW PNP Transistor Order Information Device Package Marking Carrier Quantity GSBC857AW SOT-323 3E Tape & Reel 3,000 Reel GSBC857BW SOT-323 3F Tape & Reel 3,000 Reel GSBC857CW SOT-323 3G Tape & Reel 3,000 Reel www.goodarksemi.com 4/4 Doc.USGSBC857xWxSZ1.0 Feb.2022