GSBCP69-16

GSBCP69 PNP Transistor Features ■ ■ ■ ■ High current and low voltage NPN complement: GSBCP68 General purpose switching and amplification Power applications such as audio output stages SOT-223 Absolute Maximum Ratings (TA=25°C unless otherwise noted） Parameter Symbol Value Unit Collector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1 A Collector Power Dissipation PC 1 W RθJA 125 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 to +150 ℃ Thermal Resistance From Junction To Ambient 1. BASE 2. COLLECTOR 3. EMITTER Electrical Characteristics (TA=25°C unless otherwise noted） Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Test Conditions Min Typ Max Unit V(BR)CBO IC=-0.1mA,IE=0 -32 - - V V(BR)CEO IC=-1mA,IB=0 -20 - - V V(BR)EBO IE=-0.1mA,IC=0 -5 - - V Collector Cut-Off Current ICBO VCB=-25V,IE=0 - - -100 nA Emitter Cut-Off Current IEBO VEB=-5V,IC=0 - - -100 nA DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance hFE(1) VCE=-1V, IC=-0.5A 85 - 375 - hFE(2) VCE=-1V, IC=-1A 60 - - - hFE(3) VCE=-10V, IC=-5mA 50 - - - hFE(4) VCE=-1.8V, IC=-10mA 140 - 230 - VCE(sat) IC=-1A,IB=-100mA - - -0.5 V VBE(1) VCE=-10V, IC=-5mA - - -0.68 V VBE(2) VCE=-1V, IC=-1A - - -1 V VCE=-5V,IC=-10mA , f=100MHz VCB=-5V, IE=0, f=1MHz 40 - - MHz 48 - pF fT Cob - Classification of hFE(1) Rank GSBCP69-16 GSBCP69-25 Range 100–250 160–375 1/2 GSBCP69 PNP Transistor Package Outline Dimensions SOT-223 Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° Suggested Pad Layout www.goodarksemi.com 2/2 Doc.USGSBCP69xSC2.0