GSF0500AT

GSF0500AT 50V N-Channel MOSFET D Main Product Characteristics BVDSS 50V RDS(ON) 1.6Ω ID 360mA D G S G S SOT-523 Schematic Diagram Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The GSF0500AT utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ±20 V ID 360 mA Single Pulse Avalanche Energy4 EAS 0.2 mJ Power Dissipation1 PD 0.15 W Thermal Resistance, Junction-to-Air1 RθJA 834 °C/W Thermal Resistance, Junction-to-Lead1 RθJL 500 °C/W Thermal Resistance, Junction-to-Case1 RθJC 421 °C/W Operating Junction Temperature Range TJ -55 To +150 °C TSTG -55 To +150 °C Parameter Drain Current-Continuous1 Storage Temperature Range 1/5 GSF0500AT 50V N-Channel MOSFET Electrical Characteristics (TA=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit On / Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 50 - - V Drain-Source Leakage Current IDSS VDS=50V, VGS=0V - - 1 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±10 μA VGS=10V, ID=0.5A - - 1.6 VGS=4.5V, ID=0.2A - - 2.5 VGS=2.5V, ID=0.1A - - 4.5 0.8 - 1.5 - 4.7 - - 4.2 - Static Drain-Source Gate Threshold On-Resistance2 Voltage2 RDS(ON) VGS(th) VGS=VDS, ID =250uA Ω V Dynamic and Switching Characteristics Total Gate Charge3 Qg VDS=25V, ID=0.2A VGS=10V Gate-Source Charge3 Qgs Gate-Drain Charge3 Qgd - 0.2 - Turn-On Delay Time3 td(on) - - 5 3 tr - - 18 Turn-Off Delay Time3 td(off) - - 36 - - 14 - 27 - - 13 - - 6 - VGS=0V, IS=0.5A - - 1.4 V IF=1A di/dt=100A/μs - 20 - nS - 10.7 - nC Rise Time Fall Time3 Input Capacitance3 Output Capacitance3 Reverse Transfer Capacitance3 VDD=30V, RG=6Ω VGS=10V, ID=0.29A tf Clss Coss VDS=25V, VGS=0V, F=1MHz Crss nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Diode Forward Voltage1 VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Note: 1. Surface Mounted on FR4 Board, t ≤ 10 sec . 2. Pulsed test: pulse width≤300us, duty cycle ≤2%. 3. Guaranteed by design, not subject to production 4. The EAS data shows Max. rating. The testing condition is VDS=48V, VGS=10V, L=0.5mH, RG=25Ω 2/5 GSF0500AT 50V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 3 ID, Continuous Drain Current (A) 1.4 VGS = 10V VGS = 4.5V RDS(ON), On-Resistance (Ω) 1.2 VGS = 3.5V 1 VGS = 3V 0.8 0.6 VGS = 2.5V 0.4 VGS = 2V 0.2 VGS = 1.5V 0 0 1 2 3 4 5 2.5 2 VGS = 2.5V 1.5 VGS = 4.5V 1 VGS = 10V 0.5 0 6 0.1 0.3 0.5 0.7 0.9 ID, Drain Current (A) VDS, Drain to Source Voltage (V) Figure 2. On Resistance vs. ID Figure 1. Output Characteristics 4 1.00E+07 IS, Source to Drain Current (μA) RDS(ON), On-Resistance (Ω) ID = 0.5A 75°C 100°C 3 125°C 150°C 2 1 25°C 0 1.8 3.8 5.8 7.8 9.8 1.00E+06 1.00E+04 25° C 1.00E+03 1.00E+02 -55° C 1.00E+01 1.00E+00 0 VGS, Gate to Source Voltage (V) 0.5 1 1.5 2 VSD, Source to Drain Voltage (V) Figure 4. Body Diode Characteristics Figure 3. On Resistance vs. VGS 1.8 3 ID = 0.1A VGS = 2.5V ID, Continuous Drain Current (A) RDS(ON), On-Resistance (Ω) 150° C 1.00E+05 2.5 ID = 0.2A VGS = 4.5V 2 1.5 ID=0.5A VGS=10V 1 0.5 0 -60 -35 -10 15 40 65 90 115 140 1.6 VDS = 5V 1.4 -55°C 1.2 25°C 1 0.8 0.6 0.4 150°C 0.2 0 0 165 TJ, Junction Temperature (°C) 1 2 3 VGS, Gate to Source Voltage (V) Figure 5. On Resistance vs. TJ Figure 6. Transfer Characteristics 3/5 4 GSF0500AT 50V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 90 ID = 250uA BVDSS, Drain to Source Voltage (V) VGS(th), Gate Threshold Voltage (V) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -35 -10 15 40 65 90 115 140 165 TJ, Junction Temperature (°C) ID = 250uA 80 70 60 50 -60 -35 -10 15 40 65 90 115 TJ, Junction Temperature (°C) Figure 7. Gate Threshold Voltage VGSth vs. TJ Figure 8. BVDSS vs. TJ 4/5 140 165 GSF0500AT 50V N-Channel MOSFET Package Outline Dimensions SOT-523 SOT-523 A F C K B E D J G H (Unit: mm) Dimension Min. Max. A 1.50 1.70 B 0.75 0.85 C 0.60 0.80 D 0.15 0.30 E 0.30 0.40 F 0.25 0.40 G 0.90 1.10 H 0.02 0.10 J 0.08 0.18 K 1.45 1.75 Recommended Pad Layout 0.508 0.787 1.803 0.356 1.000 (Unit in mm) Order Information Device Package Marking Code Carrier Quantity HSF Status GSF0500AT SOT-523 MM5 Tape & Reel 3,000/Reel RoHS Compliant www.goodarksemi.com 5/5 Doc.USGSF0500ATxSG3.2 Nov.2021