GSF2315

GSF2315 20V P-Channel MOSFET Main Product Characteristics VDS -20V RDS(ON) 90mΩ ID D D G S -1.5A G Features and Benefits § S SOT-323 Schematic Diagram Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSF2315 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V -1.5 A -0.95 A -6 A 312 mW 2.5 mW/°C RθJA 400 °C/W TJ -55 To +150 °C TSTG -55 To +150 °C Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 IDM Power Dissipation (TC=25°C) PD Power Dissipation-Derate Above 25°C Thermal Resistance, Junction-to-Ambient Operating Junction Temperature Range Storage Temperature Range 1/5 GSF2315 20V P-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS BVDSS Temperature Coefficient △BVDSS/△TJ Drain-Source Leakage Current (TJ=25°C) Drain-Source Leakage Current (TJ=125°C) IDSS Gate-Source Leakage Current IGSS VGS=0V, ID=-250μA -20 - - V Reference to 25°C, ID=-1mA - -0.01 - V/°C VDS=-20V, VGS=0V - - -1 μA VDS=-16V, VGS=0V - - -10 μA VGS=±10V, VDS=0V - - ±100 nA VGS=-4.5V, ID=-1A - 75 90 VGS=-2.5V, ID=-1A - 100 130 VGS=-1.8V, ID=-1A - 130 170 -0.3 -0.6 -1 V - 3 - mV/°C - 2.2 - S - 4.8 8 - 0.5 1 On Characteristics Static Drain-Source On-State Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient Forward Transconductance RDS(ON) VGS(th) VDS=VGS, ID=-250μA △VGS(th) gfs VDS=-10V, IS=-1A mΩ Dynamic and Switching Characteristics Total Gate Charge2,3 Qg VDS=-10V, ID=-1A, VGS=-4.5V nC Gate-Source Charge2,3 Qgs Gate-Drain Charge2,3 Qgd - 1.9 4 td(on) - 3.5 7 - 12.6 24 - 32.6 62 - 8.4 16 - 350 510 - 65 95 - 50 75 - - -1.5 A - - -3 A - - -1 V Turn-On Delay Time2,3 Rise Time2,3 Turn-Off Delay Time2,3 Fall Time2,3 Input Capacitance tr td(off) VDD=-10V, ID=-1A VGS=-4.5V, RG=25Ω tf Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V, F=1.0MHz nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage IS ISM VSD VG=VD=0V, Force Current TJ=25°C, IS=-1A, VGS=0V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width ≦3 00us,duty cycle ≦2 %. 3. Essentially independent of operating temperature. 2/5 GSF2315 20V P-Channel MOSFET -ID , Continuous Drain Current (A) Normalized On Resistance (mΩ) Typical Electrical and Thermal Characteristic Curves TJ , Junction Temperature (°C) TC , Case Temperature (°C) Figure 2. Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Figure 1. Continuous Drain Current vs. TC TJ , Junction Temperature (°C) Figure 3. Normalized Vth vs. TJ Figure 4. Gate Charge Waveform Normalized Thermal Response (RΘJA) -ID , Continuous Drain Current (A) Qg , Gate Charge (nC) Square Wave Pulse Duration (s) -VDS, Drain to Source Voltage (V) Figure 5. Normalized Transient Response Figure 6. Maximum Safe Operation Area 3/5 GSF2315 20V P-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 7. Switching Time Waveform Figure 8. Gate Charge Waveform 4/5 GSF2315 20V P-Channel MOSFET Package Outline Dimensions (SOT-323) Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 A1 0.100 0.000 0.004 0.000 A2 1.000 0.800 0.039 0.031 b 0.400 0.200 0.016 0.008 c 0.250 0.080 0.010 0.003 D 2.200 1.800 0.087 0.071 E 1.350 1.150 0.053 0.045 E1 2.450 1.800 0.096 0.071 e e1 0.65BSC 0.026BSC 1.400 L 1.200 0.055 0.525REF. 0.047 0.021REF. L1 0.460 0.150 0.018 0.006 L2 0.200 0.000 0.008 0.000 θ 8° 0° 8° 0° www.goodarksemi.com 5/5 Doc.USGSF2315xSP3.0 Aug.2020