GSF7002AT

GSF7002AT 60V N-Channel MOSFET Main Product Characteristics BVDSS 60V RDS(ON) 7.5Ω D D G 115mA ID G S S SOT-523 Schematic Diagram Features and Benefits § Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSF7002AT utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 115 mA Power Dissipation PD 150 mW Thermal Resistance, Junction-to-Ambient RθJA 833 °C/W Storage Temperature Range TSTG -55 To +150 °C TJ -55 To +150 °C Parameter Operating Junction Temperature Range 1/3 GSF7002AT 60V N-Channel MOSFET Electrical Characteristics (TA=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 60 - - V Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA Gate-Body Leakage IGSS VGS=±20V, VDS=0V - - ±1 μA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 100 nA 1 - 2.5 V 500 - - mA VGS=10V, ID=500mA - - 7.5 VGS=5V, ID=50mA - - 7.5 VDS=10V, ID=200mA 80 - 500 mS VGS=10V, ID=500mA - - 3.75 V VGS=5V, ID=50mA - - 0.375 V IS=250mA, VGS=0V - - 1 V - - 50 - - 25 - - 5 - 5.6 - - 25 - On Characteristics Gate Threshold Voltage Vth(GS) VDS=VGS, ID=250uA On-state Drain Current ID(ON) VGS=10V, VDS=7V Static Drain-Source On-State Resistance Forward Transconductance Drain-Source On-Voltage Diode Forward Voltage RDS(ON) gFS VDS(on) VSD Ω Dynamic and Switching Characteristics Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time td(on) Turn-Off Time td(off) VDS=25V, VGS=0V, F=1.0MHz VDD=10V, ID=500mA, VGEN=10V,RL=20Ω, RG=10Ω 2/3 pF nS GSF7002AT 60V N-Channel MOSFET Package Outline Dimensions (SOT-523) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.70 0.90 0.028 0.035 A1 0.00 0.10 0.000 0.004 A2 0.70 0.80 0.028 0.031 b1 0.15 0.25 0.006 0.010 b2 0.25 0.35 0.010 0.014 c 0.10 0.20 0.004 0.008 D 1.50 1.70 0.059 0.067 E 0.70 0.90 0.028 0.035 E1 1.45 1.75 0.057 0.069 e e1 0.020 TYP. 0.50 TYP. 0.90 L 1.10 0.035 0.043 0.016 REF. 0.40 REF. L1 0.10 0.30 0.004 0.012 θ 0 8 0 8O O O O Recommended Pad Layout (Unit: MM) Order Information Device Package GSF7002AT SOT-523 www.goodarksemi.com Marking Code K72 Carrier Tape & Reel 3/3 Quantity 3000/Reel HSF Status RoHS Compliant Doc.USGSF7002ATxST2.0 Jul.2019