GSFD0646

GSFD0646 60V N-Channel MOSFET Main Product Characteristics BVDSS 60V RDS(ON) 12mΩ ID 45A D D G S G S TO-252 (DPAK) Schematic Diagram Features and Benefits § Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSFD0646 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) 45 28 A Drain Current-Pulsed1 IDM 180 A Single Pulse Avalanche Energy2 EAS 61 mJ Single Pulse Avalanche Current2 IAS 35 A 63 W 0.5 W/°C Power Dissipation (TC=25°C) PD Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 2 °C/W Operating Junction Temperature Range TJ -55 To +150 °C TSTG -55 To +150 °C Storage Temperature Range 1/5 GSFD0646 60V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 60 - - V - 0.03 - V/°C - - 1 μA VDS=48V, VGS=0V, TJ=85°C - - 10 μA VGS=±20V, VDS=0V - - !100 nA VGS=10V, ID=10A - 10 12 VGS=4.5V, ID=8A - 12 15 1.2 1.6 2.5 V - -4 - mV/°C - 11.7 - S - 39.2 59 - 5.9 9 Qgd - 8.8 14 Turn-On Delay Time3,4 td(on) - 9.6 18 3,4 tr - 28.2 54 Turn-Off Delay Time3,4 td(off) - 45.3 86 - 10.9 21 - 2100 3050 - 165 240 - 80 120 - 1.6 3.2 Ω - - 45 A - - 180 A - - 1 V On/Off Characteristics Drain-Source Breakdown Voltage BVDSS BVDSS Temperature Coefficient △BVDSS/△TJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance3 RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient △VGS(th) Forward Transconductance gfs VGS=0V, ID=250uA Reference to 25°C, ID=1mA VDS=60V, VGS=0V, TJ=25°C VGS=VDS, ID =250uA VDS=10V, ID=6A mΩ Dynamic and Switching Characteristics Total Gate Charge3,4 Qg Gate-Source Charge3,4 Qgs Gate-Drain Charge Rise Time 3,4 Fall Time3,4 VDS=30V, ID=10A VGS=10V VDD=15V, RG=6Ω VGS=10V, ID=1A tf Input Capacitance CIss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VDS=25V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current Pulsed Source Current 3 Diode Forward Voltage3 IS ISM VG=VD=0V, Force Current VSD VGS=0V, IS=1A, TJ=25°C Note: 1. Repetitive rating: Pulsed width limited by maximum junction temperature. 2. VDD=25V, VGS=10V, L=0.1mH, I AS=35A, RG =25Ω,starting TJ=25°C. 3. Pulse test: pulse width !300us,duty cycle!2%. 4. Essentially independent of operating temperature. 2/5 GSFD0646 60V N-Channel MOSFET Normalized On Resistance ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves TC , Case Temperature (°C) Figure 1. Continuous Drain Current vs. TC Figure 2. Normalized RDSON vs. TJ Normalized Gate Threshold Voltage VGS , Gate to Source Voltage (V) TJ , Junction Temperature (°C) TJ , Junction Temperature (°C) Qg , Gate Charge (nC) Figure 3. Normalized Vth vs. TJ Normalized Thermal Response ID , Continuous Drain Current (A) Figure 4. Gate Charge Waveform VDS, Drain to Source Voltage (V) Square Wave Pulse Duration(s) Figure 6. Maximum Safe Operation Area Figure 5. Normalized Transient Response 3/5 GSFD0646 60V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves EAS= 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS IAS VGS Firgure 8. EAS Waveform Firgure 7. Switching Time Waveform 4/5 VDD GSFD0646 60V N-Channel MOSFET Package Outline Dimensions (TO-252) Symbol Dimensions In Millimeters MAX MIN A 2.400 A1 Dimensions In Inches MAX MIN 2.200 0.094 0.087 1.110 0.910 0.044 0.036 A2 0.150 0.000 0.006 0.000 B 6.800 6.400 0.268 0.252 C 0.580 0.450 0.023 0.018 C1 0.580 0.460 0.023 0.018 D 5.500 5.100 0.217 0.201 E 2.386 2.186 0.094 0.086 F 0.940 0.600 0.037 0.024 F1 0.860 0.500 0.034 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.200 5.400 0.244 0.213 L3 1.200 0.600 0.047 0.024 θ 9° 3° www.goodarksemi.com 9° 5/5 3° Doc.USGSFD0646XSP2.0 Dec.2020