GSFD0650

GSFD0650 65V N-Channel MOSFET Main Product Characteristics D D BVDSS 65V RDS(ON) 8.8mΩ ID G 50A G S S TO-252 (DPAK) Schematic Diagram Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The GSFD0650 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) 50 31.6 A Drain Current-Pulsed1 IDM 200 A Single Pulse Avalanche Energy2 EAS 68.5 mJ Single Pulse Avalanche Current2 IAS 37 A 53 W 0.42 W/°C Power Dissipation (TC=25°C) PD Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 2.36 °C/W Operating Junction Temperature Range TJ -55 To +150 °C TSTG -55 To +150 °C Storage Temperature Range 1/5 GSFD0650 65V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 65 - - V - - 1 μA - - 10 μA VGS=±20V, VDS=0V - - ±100 nA VGS= 10V, ID=15A - 7.3 8.8 VGS= 4.5V, ID=12A - 11.3 14.7 1.2 1.6 2.5 V - 10 - S - 16.6 25 - 1.8 2.7 Qgd - 6.5 10 Turn-On Delay Time3,4 td(on) - 10 15 3,4 tr - 13.5 21 Turn-Off Delay Time3,4 td(off) - 28 42 - 20 30 - 810 1210 - 320 480 - 22 35 - 0.9 - Ω - - 50 A - - 100 A - - 1 V - 30 - nS - 24 - nC On / Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA IDSS VDS= 60V, VGS=0V, TJ=25°C VDS= 48V, VGS=0V, TJ=85°C Drain-Source Leakage Current Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) Forward Transconductance gfs VGS=VDS, ID=250uA VDS= 10V, IS=3A mΩ Dynamic and Switching Characteristics Total Gate Charge3,4 Qg Gate-Source Charge3,4 Qgs Gate-Drain Charge Rise Time 3,4 Fall Time3,4 VDS= 30V, ID=20A VGS=10V VDD=30V, RG=6Ω VGS=10V, ID=20A tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VDS= 30V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time3 Reverse Recovery Charge3 IS ISM VG=VD=0V, Force Current VSD VGS=0V, IS=1A, TJ=25°C trr Qrr VR=30V, IS=10A di/dt=100A/μs TJ=25°C Note: 1. 2. 3. 4. Repetitive rating: Pulsed width limited by maximum junction temperature. VDD=25V, VGS=10V, L=0.1mH, IAS=37A, RG=25Ω, starting TJ=25°C. Pulse test: pulse width ! 300us, duty cycle ! 2%. Essentially independent of operating temperature. 2/5 GSFD0650 65V N-Channel MOSFET Normalized On Resistance ID, Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves TC, Case Temperature (°C) Figure 2. Normalized RDS(ON) vs. TJ Normalized Gate Threshold Voltage VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Figure 1. Continuous Drain Current vs. TC Qg, Gate Charge (nC) TJ, Junction Temperature (°C) Figure 4. Gate Charge Waveform Normalized Thermal Response ID, Continuous Drain Current (A) Figure 3. Normalized Vth vs. TJ VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (S) Figure 5. Normalized Transient Impedance Figure 6. Maximum Safe Operation Area 3/5 GSFD0650 65V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves VDS 90% 10% VGS Td(on) Tr Ton Tf Td(off) Toff Figure 8. Gate Charge Waveform Figure 7. Switching Time Waveform 4/5 GSFD0650 65V N-Channel MOSFET Package Outline Dimensions Symbol TO-252 (DPAK) Dimensions in Milimeters Dimensions in Inches Min Max Min Max A 2.200 2.400 0.087 0.094 A1 0.910 1.110 0.036 0.044 A2 0.000 0.150 0.000 0.006 B 6.400 6.800 0.252 0.268 C 0.450 0.580 0.018 0.023 C1 0.460 0.580 0.018 0.023 D 5.100 5.500 0.201 0.217 E 2.186 2.386 0.086 0.094 F 0.600 0.940 0.024 0.037 F1 0.500 0.860 0.020 0.034 L 9.400 10.400 0.370 0.409 L1 2.400 3.000 0.094 0.118 L2 5.400 6.200 0.213 0.244 L3 0.600 1.200 0.024 0.047 θ 3° 9° 3° 9° www.goodarksemi.com 5/5 Doc.USGSFD0650xSP2.0 Feb. 2022