GSFD0982

GSFD0982 100V N-Channel MOSFET Main Product Characteristics BVDSS 100V RDS(ON) 10.8mΩ D G 50A ID D G S TO-252 (DPAK) Features and Benefits § S Schematic Diagram Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSFD0982 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) 50 32 A Drain Current-Pulsed1 IDM 200 A Single Pulse Avalanche Energy2 EAS 115 mJ Single Pulse Avalanche Current2 IAS 48 A 78 W Power Dissipation (TC=25°C) PD Power Dissipation-Derate above 25°C 0.624 W/°C Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 1.61 °C/W Operating Junction Temperature Range TJ -55 To +150 °C TSTG -55 To +150 °C Storage Temperature Range 1/5 GSFD0982 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 100 - - V - - 1 μA - - 10 μA VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=20A - 9 10.8 VGS=4.5V, ID=15A - 11.7 15.2 1.2 1.6 2.5 V - 10 - S - 26.1 39 - 6.5 10 On / Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA IDSS VDS=80V, VGS=0V, TJ=25°C VDS=80V, VGS=0V, TJ=85°C Drain-Source Leakage Current Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) Forward Transconductance gfs VGS=VDS, ID =250uA VDS=10V, ID=3A mΩ Dynamic and Switching Characteristics Total Gate Charge3,4 Qg Gate-Source Charge3,4 Qgs Gate-Drain Charge3,4 Qgd - 5.3 8 Turn-On Delay Time3,4 td(on) - 14.2 28 3,4 tr - 20.8 42 Turn-Off Delay Time3,4 td(off) - 42 84 - 30 60 - 1450 2145 - 215 322 - 8 20 - 1.04 - Ω - - 50 A - - 100 A - - 1 V - 155 - nS - 230 - nC Rise Time Fall Time3,4 VDD=50V, RG=6Ω VGS=10V, ID=10A tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDS=50V, ID=10A VGS=10V Rg VDS=50V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current IS ISM VG=VD=0V, Force Current Diode Forward Voltage3 VSD VGS=0V, IS=1A, TJ=25°C Reverse Recovery Time3 trr Reverse Recovery Charge3 Qrr Pulsed Source Current3 VR=100V, IS=10A di/dt=100A/μs TJ=25°C Note: 1. 2. 3. 4. Repetitive rating: Pulsed width limited by maximum junction temperature. VDD=50V, VGS=10V, L=0.1mH, IAS=48A, RG=25Ω, starting TJ=25°C. Pulse test: pulse width !300us, duty cycle!2%. Essentially independent of operating temperature. 2/5 GSFD0982 100V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 50 40 VGS=3.5V ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) VGS=4.5V 32 VGS=3.3V 24 VGS=3V 16 VGS=2.7V 8 0 0 2 4 6 8 40 30 20 10 0 10 25 50 VDS, Drain to Source Voltage (V) Normalized Gate Threshold Voltage Normalized On Resistance 150 1.4 2 1.5 1 0.5 1.2 1 0.8 0.6 0.4 -50 0 50 100 150 TJ, Junction Temperature (°C) Figure 3. Normalized RDSON vs. TJ -50 0 50 100 TJ, Junction Temperature (°C) 150 Figure 4. Normalized Vth vs. TJ 16 RDS(ON), Turn-On Resistance (mohm) 14 RDS(ON), Turn-On Resistance (mohm) 125 Figure 2. Continuous Drain Current vs. TC 2.5 13 12 11 ID=20A 10 ID=15A 9 8 100 TC, Case Temperature (°C) Figure 1. Typical Output Characteristics 0 75 Tc=25℃ 2 4 6 8 VGS, Gate to Source Voltage (V) 10 14 VGS=4.5V 12 VGS=6V 10 VGS=10V 8 6 Tc=25℃ 5 12 19 26 ID, Drain Current (A) Figure 5. Turn-On Resistance vs. VGS Figure 6. Turn-On Resistance vs. ID 3/5 33 40 GSFD0982 100V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 10 Capacitance (pF) 1000 VGS, Gate to Source Voltage (V) Cis s Cos s 100 10 Crs s 1 0.1 1 10 Tc=25℃ Normalized Thermal Response ID, Continuous Drain Current (A) 2 0 6 12 18 24 30 VDS=10V Tc=125℃ 21 14 7 0 1 2 3 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 4 VGS, Gate to Source Voltage (V) 0.001 BVDSS 10us 100us 10 1ms 10ms 100ms DC 1 IAS 0.1 TC=25℃ 0.1 1 10 0.01 0.1 1 Figure 10. Normalized Transient Impedance 100 0.01 NOTES: DUTY FACTOR: D = t1/ t2 Square Wave Pulse Duration (s) Figure 9. Transfer Characteristics ID, Continuous Drain Current (A) 4 Figure 8. Gate Charge Characteristics 28 0 6 Qg, Gate Charge (nC) Figure 7. Capacitance Characteristics 35 8 0 100 VDS, Drain to Source Voltage (V) ID=10A VDS=50V VGS 100 VDS, Drain to Source Voltage (V) Figure 12. EAS Waveform Figure 11. Maximum Safe Operation Area 4/5 VDD GSFD0982 100V N-Channel MOSFET Package Outline Dimensions TO-252 (DPAK) Symbol Dimensions in Milimeters Dimensions in Inches Max Min Max Min A 2 450 2.150 0.096 0.085 A1 1.200 0.910 0.047 0.036 A2 0.150 0.000 0.006 0.000 B 6.800 6.300 0.268 0.248 C 0.580 0.350 0.023 0.014 C1 0.550 0.380 0.022 0.015 D 5.500 5.100 0.217 0.201 E 2.390 2.000 0.094 0.079 F 0.940 0.600 0.037 0.024 F1 0.860 0.500 0.034 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.200 5.300 0.244 0.209 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° www.goodarksemi.com 5/5 Doc.USGSFD0982xSP2.0 Sept.2021