GSFD1028

GSFD1028 100V N-Channel MOSFET Main Product Characteristics V(BR)DSS 100V RDS(on) 21mΩ ID 30A D D G S S G TO-252 (DPAK) Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Schematic Diagram Description The GSFD1028 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) 30 19 A Drain Current-Pulsed1 IDM 120 A Single Pulse Avalanche Energy2 EAS 51 mJ Single Pulse Avalanche Current2 IAS 32 A 53 W 0.42 W/°C Power Dissipation (TC=25°C) PD Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 2.37 °C/W TJ -55 To +150 °C TSTG -55 To +150 °C Operating Junction Temperature Range Storage Temperature Range 1/5 GSFD1028 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 100 - - V - - 1 μA - - 10 μA VGS=±20V, VDS=0V - - ±100 nA VGS= 10V, ID=14A - 17.5 21 VGS= 4.5V, ID=10A - 22 29 VGS=VDS, ID =250uA 1.2 1.6 2.5 V - 9 - S - 12.5 20 - 1.5 3 On / Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250uA IDSS VDS= 80V, VGS=0V, TJ=25°C VDS= 80V, VGS=0V, TJ=85°C Drain-Source Leakage Current Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) Forward Transconductance gfs VDS= 10V, ID=3A mΩ Dynamic and Switching Characteristics Total Gate Charge3,4 Qg Gate-Source Charge3,4 Qgs Gate-Drain Charge3,4 Qgd - 4.3 6 Turn-On Delay Time3,4 td(on) - 20 30 - 30 45 - 55 70 - 30 45 - 690 1030 - 135 200 - 6 9 - 0.8 - Ω - - 30 A - - 60 A - - 1 V - 180 - nS - 300 - nC Rise Time3,4 Turn-Off Delay Time3,4 Fall Time3,4 tr td(off) VDD=50V, RG=6Ω VGS=10V, ID=15A tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDS= 50V, ID=15A VGS=10V Rg VDS= 50V, VGS=0V F=1MHz VGS= 0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr VG=VD=0V, Force Current VGS= 0V, IS=1A, TJ=25°C IS=10A, VR=100V di/dt=100A/μs TJ=25°C Note: 1. 2. 3. 4. Repetitive Rating: Pulsed width limited by maximum junction temperature. VDD=50V, L=0.1mH, IAS=32A, RG=25Ω, Starting TJ=25°C. Pulse test: pulse width ≦ 300uS, duty cycle ≦ 2%. Essentially independent of operating temperature. 2/5 GSFD1028 100V N-Channel MOSFET ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) Figure 2. Continuous Drain Current vs. TC Normalized On Resistance Normalized Gate Threshold Voltage (V) Figure 1. Typical Output Characteristics TJ, Junction Temperature (°C) Figure 3. Normalized RDSON vs. TJ Figure 4. Normalized Vth vs. TJ Capacitance (pF) VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Qg, Gate Charge (nC) VDS, Drain to Source Voltage (V) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3/5 GSFD1028 100V N-Channel MOSFET Normalized Thermal Response ID, Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (s) Figure 7. Normalized Transient Impedance Figure 8. Maximum Safe Operation Area VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Figure 10. EAS Waveform Figure 9. Switching Time Waveform 4/5 GSFD1028 100V N-Channel MOSFET Package Outline Dimensions Symbol TO-252 (DPAK) Dimensions in Millimeters Dimensions in Inches Min Max Min Max A 2.150 2.450 0.085 0.096 A1 0.910 1.200 0.036 0.047 A2 0.000 0.150 0.000 0.006 B 6.300 6.800 0.248 0.268 C 0.350 0.580 0.014 0.023 C1 0.380 0.550 0.015 0.022 D 5.100 5.500 0.201 0.217 E 2.000 2.390 0.079 0.094 F 0.600 0.940 0.024 0.037 F1 0.500 0.860 0.020 0.034 L 9.400 10.400 0.370 0.409 L1 2.400 3.000 0.094 0.118 L2 5.300 6.200 0.209 0.244 L3 0.600 1.200 0.024 0.047 θ 3° 9° 3° 9° www.goodarksemi.com 5/5 Doc.USGSFD1028xSP3.0 May. 2022