GSFD1550

GSFD1550 150V N-Channel MOSFET Main Product Characteristics V(BR)DSS 150V RDS(on) 22mΩ ID 50A D D G S S G TO-252 (DPAK) Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Schematic Diagram Description The GSFD1550 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) 50 32 A Drain Current-Pulsed1 IDM 200 A Single Pulse Avalanche Energy2 EAS 153 mJ Single Pulse Avalanche Current2 IAS 17.5 A 133 W 1.06 W/°C Power Dissipation (TC=25°C) PD Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 0.94 °C/W TJ -50 To +150 °C TSTG -50 To +150 °C Operating Junction Temperature Range Storage Temperature Range 1/5 GSFD1550 150V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 150 - - V - - 1 μA - - 10 μA On / Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current BVDSS VGS=0V, ID=250uA IDSS VDS=120V, VGS=0V, TJ=25°C VDS=120V, VGS=0V, TJ=85°C IGSS VGS=±20V, VDS=0V - - ±100 nA Static Drain-Source On-Resistance3 RDS(ON) VGS=10V, ID=25A - 18 22 mΩ Gate Threshold Voltage VGS(th) VGS=VDS, ID=250uA 2 3 4 V VDS=10V, ID=3A - 11 - S - 39 60 - 9.5 15 Qgd - 15 23 Turn-On Delay Time3,4 td(on) - 15 23 3,4 tr - 28 42 Turn-Off Delay Time3,4 td(off) - 45 68 - 32 48 - 2300 3450 - 220 330 - 10 15 - 1.5 - Ω - - 50 A - - 100 A - - 1 V - 90 - nS - 355 - nC Forward Transconductance gfs Dynamic and Switching Characteristics Total Gate Charge3,4 Qg Gate-Source Charge3,4 Qgs Gate-Drain Charge Rise Time 3,4 Fall Time3,4 VDD=75V, RG=6Ω VGS=10V, ID=25A tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDS=75V, ID=25A VGS=10V Rg VDS=75V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD Reverse Recovery Time3 trr Reverse Recovery Charge3 Qrr VG=VD=0V, Force Current VGS=0V, IS=1A, TJ=25°C VR=100V, IS=10A di/dt=100A/μs TJ=25°C Note: 1. 2. 3. 4. Repetitive Rating: Pulsed width limited by maximum junction temperature. VDD=50V, VGS=10V, L=1mH, IAS=17.5A, RG=25Ω, Starting TJ=25°C. The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦ 2%. Essentially independent of operating temperature. 2/5 GSFD1550 150V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 50 VGS=6.5V VGS=5.7V ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 50 40 VGS=5.5V VGS=5.3V 30 VGS=5V 20 VGS=4.7V 10 40 30 20 10 0 0 0 2 4 6 8 10 25 VDS, Drain to Source Voltage (V) 100 125 150 1.4 Normalized Gate Threshold Voltage 2.5 Normalized On Resistance 75 Figure 2. Continuous Drain Current vs. TC Figure 1. Typical Output Characteristics 2 1.5 1 0.5 1.2 1 0.8 0.6 0.4 0 -50 0 50 100 -50 150 TJ, Junction Temperature (°C) 0 50 100 150 TJ, Junction Temperature (°C) Figure 3. Normalized RDSON vs. TJ Figure 4. Normalized Vth vs. TJ 22 20 RDS(ON), Turn-On Resistance (mΩ) RDS(ON), Turn-On Resistance (mΩ) 50 TC, Case Temperature (°C) 21 20 ID=25A 19 ID=10A 18 17 Tc=25℃ 16 VGS=8V 19 VGS=10V 18 VGS=12V 17 Tc=25℃ 16 4 6 8 10 12 14 5 VGS, Gate to Source Voltage (V) 11 17 23 ID, Drain Current (V) Figure 5. Turn-On Resistance vs. VGS Figure 6. Turn-On Resistance vs. ID 3/5 29 35 GSFD1550 150V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 10 VGS, Gate to Source Voltage (V) Ciss 1000 Capacitance (pF) Coss 100 Crss 10 1 ID=25A VDS=75V 8 6 4 2 0 0.1 1 10 100 0 8 ID, Continuous Drain Current (A) Normalized Thermal Response 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.00001 NOTES: DUTY FACTOR: D = t1/t2 100 10us 100us 10 1ms 10ms 100ms DC 1 0.1 TC=25℃ 0.0001 0.001 0.01 0.1 0.1 1 1 90% 10% Td(off) Ton 100 Figure 10. Maximum Safe Operation Area VDS Tr 10 VDS, Drain to Source Voltage (V) Figure 9. Normalized Transient Impedance Td(on) 40 0.01 Square Wave Pulse Duration (s) VGS 32 Figure 8. Gate Charge Waveform Figure 7. Capacitance Characteristics SINGLE PULSE 24 Qg, Gate Charge (nC) VDS, Drain-Source Voltage(V) 0.1 16 Tf Toff Figure 12. EAS Waveform Figure 11. Switching Time Waveform 4/5 GSFD1550 150V N-Channel MOSFET Package Outline Dimensions TO-252 (DPAK) Dimensions in Millimeters Symbol Dimensions in Inches Min Max Min Max A 2.150 2.450 0.085 0.096 A1 0.910 1.200 0.036 0.047 A2 0.000 0.150 0.000 0.006 B 6.300 6.800 0.248 0.268 C 0.350 0.580 0.014 0.023 C1 0.380 0.550 0.015 0.022 D 5.100 5.500 0.201 0.217 E 2.000 2.390 0.079 0.094 F 0.600 0.940 0.024 0.037 F1 0.500 0.860 0.020 0.034 L 9.400 10.400 0.370 0.409 L1 2.400 3.000 0.094 0.118 L2 5.300 6.200 0.209 0.244 L3 0.600 1.200 0.024 0.047 θ 3° 9° 3° 9° Device Package Marking Carrier Quantity GSFD1550 TO-252 (DPAK) DD65N15BH Tape & Reel 2,500 pcs / Reel Order Information www.goodarksemi.com 5/5 Doc.USGSFD1550xSP2.1 Aug. 2023