GSFD8005

GSFD8005 800V N-Channel MOSFET D Main Product Characteristics V(BR)DSS 800V RDS(ON) 2.7Ω D G S ID 5.5A S G TO-252 (DPAK) Schematic Diagram Features and Benefits ▪ Advanced MOSFET process technology ▪ Ideal for high efficiency switched mode power supplies ▪ Low on-resistance with low gate charge ▪ Fast switching and reverse body recovery Description The GSFD8005 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Symbol Max. Unit Drain-Source Voltage V DS 800 V Gate-to-Source Voltage V GS ± 30 V Continuous Drain Current, VGS @ 10V 1 ID @ TC = 25°C 5.5 A Continuous Drain Current, VGS @ 10V 1 ID @ TC = 100°C 3.5 A 2 I DM 22 A Single Pulse Avalanche Energy @ L=30mH E AS 323 mJ Avalanche Current@ L=30mH I AS 4.5 A P D @TC = 25°C 132 W 1.06 W/°C 0.95 °C/W 62 °C/W 45 °C/W -55 to + 150 °C Pulsed Drain Current Power Dissipation 3 Linear Derating Factor RθJC Junction-to-Case 3 Junction-to-Ambient (t ≤ 10s) 4 R θJA Junction-to-Ambient (PCB Mounted, Steady-State) 4 Operating Junction and Storage Temperature Range TJ 1/6 TSTG GSFD8005 800V N-Channel MOSFET Electrical Characteristics (TC=25°C Parameter Drain-to-Source Breakdown Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage unless otherwise specified) Symbol V (BR)DSS Conditions Min. Typ. Max. Unit V GS = 0V, ID = 250μA 800 - — V V DS = 800V, V GS = 0V - - 1 T J = 125°C - - 50 V GS =30V - - 100 nA V GS = -30V - - -100 nA V GS =10V, I D = 2.5A - 2.1 2.7 T J = 125°C - 4.4 - 2 3 4 - 1.93 - - 678 - - 71 - μA I DSS I GSS Static Drain-to-Source OnResistance RDS (on) Gate Threshold Voltage V GS (th) Ω V DS = V GS , ID = 250μA V T J = 125°C Input Capacitance C iss Output Capacitance C oss Reverse transfer capacitance C rss - 4 - Qg - 15.16 - - 4.27 - - 6.78 - - 11.9 - - 23.1 - - 25.3 - - 24 - Min. Typ. Max. Unit - - 5.5 A - - 22 A IS =5A, V GS =0V - 0.74 1.4 V Total Gate Charge Gate-to-Source Charge Q gs Gate-to-Drain("Miller") Charge Q gd Turn-on Delay Time ID = 5A, V DS =640V, V GS = 10V t d(on) Rise Time tr Turn-Off Delay Time VGS = 0V VDS = 25V ƒ = 1MHz V GS=10V, V DS=400V, RL=75Ω, RGEN=25Ω t d(off) Fall Time ID=5A tf pF nC nS Source-Drain Ratings and Characteristics Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Symbol IS Conditions MOSFET symbol showing the integral reverse p-n junction diode. Diode) I SM Diode Forward Voltage V SD Reverse Recovery Time t rr TJ = 25°C, IF =5A - 548 - ns Reverse Recovery Charge Q rr d i /d t =100A/μs - 2950 - nC Notes 1. Calculated continuous current based on maximum allowable junction temperature. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. The power dissipation P D is based on max. junction temperature, using junction-to-case thermal resistance. 4. The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C 2/6 GSFD8005 800V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 2. Gate to Source Cut-off Voltage Figure 1. Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Figure 4. Normalized On-Resistance Vs. Voltage Vs. Case Temperature. Case Temperature 3/6 GSFD8005 800V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 5. Maximum Drain Current Vs. Case Figure 6. Typical Capacitance Vs. Drain-to- Source Voltage Temperature Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4/6 GSFD8005 800V N-Channel MOSFET Test Circuit & Waveform Figure 8. Unclamped Inductive Switching Test Circuit & Waveforms Figure 9. Resistive Switching Test Circuit & Waveforms Figure 10. Gate Charge Test Circuit & Waveform 5/6 GSFD8005 800V N-Channel MOSFET Package Outline Dimensions Symbol A A1 B B1 C D D1 D2 E E1 e H F K V2 Min 2.200 0.910 0.710 5.130 0.460 6.000 6.500 2.186 9.800 1.400 www.goodarksemi.com TO-252 (DPAK) Dimension In Millimeters Nom Max 2.300 2.380 1.010 1.110 0.760 0.810 5.330 5.460 0.510 0.560 6.100 6.200 5.350 (REF) 2.900 (REF) 6.600 6.700 4.83 (REF) 2.286 2.386 10.100 10.400 1.500 1.700 1.600 (REF) Min 0.087 0.036 0.028 0.202 0.018 0.236 0.256 0.086 0.386 0.055 0 Dimension In Inches Nom 0.091 0.040 0.030 0.210 0.020 0.240 0.211 (REF) 0.114 (REF) 0.260 0.190 (REF) 0.090 0.398 0.059 0.063 (REF) Max 0.094 0.044 0.032 0.215 0.022 0.244 0.264 0.094 0.409 0.067 0 8 (REF) 8 (REF) 6/6 Doc.USGSFD8005xSJ4.0 May.2022