GSFKW0202

GSFKW0202 20V N-Channel MOSFET Main Product Characteristics V(BR)DSS 20V RDS(ON) 70mΩ ID 2.5A D D G S G Schematic Diagram SOT-323 Features and Benefits § S Advanced MOSFET process technology § Ideal for high efficiency switch mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSFKW0202 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V 2.5 A 2 A 14 A 0.7 W 5.6 W/°C RθJA 178 °C/W TJ -55 To +150 °C TSTG -55 To +150 °C Continuous Drain Current, @Steady-State (TA=25°C)1 Continuous Drain Current, @Steady-State (TA=70°C)1 Pulsed Drain Current2 Power Dissipation(TA=25°C) Derating Factor(TA=25°C) Junction-to-Ambient @Steady-State3 Operating Junction Temperature Range Storage Temperature Range ID IDM PD 1/6 GSFKW0202 20V N-Channel MOSFET Electrical Characteristics (TA=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage IGSS Static Drain-Source On-State Resistance RDS(ON) Gate Threshold Voltage VGS(th) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg unless otherwise specified) Conditions Min. Typ. Max. Unit VGS=0V, ID=250μA 20 - - V VDS=20V, VGS=0V - - 1 TJ=125°C - - 50 VGS=+10V - - 100 VGS=-10V - - -100 VGS=4.5V, ID=2.5A - 57 70 VGS=2.5V, ID=2.0A - 72 98 VDS=VGS, ID=250μA 0.55 0.78 1.1 - 280 - - 46 - - 29 - - 2.9 - - 0.4 - VDS=10V, VGS=0V, F=1.0MHz VDS=10V, ID=2.5A, VGS=10V μA nA mΩ V pF nC Gate-Source Charge Qgs Gate-to-Drain("Miller") Charge Qgd - 0.6 - td(on) - 13 - - 54 - - 18 - - 11 - - - 2.5 A - - 14 A - 0.86 1.2 V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS=10V, ID=6.6A, RL=1.5Ω, VGS=4.5V, RGEN=3Ω tf nS Source-Drain Ratings and Characteristics Continuous Source Current (Body Diode)2 Pulsed Source-Drain Current (Body Diode) ISM MOSFET symbol showing the integral reverse p-n junction diode. Diode Forward Voltage VSD IS=2.5A, VGS=0V IS Notes 1. Pulse test: Pulse Width≤300us, Duty cycle ≤2%. 2. Repetitive Rating: pulse width limited by maximum junction temperature. 3. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062inch, t≤10 sec. 2/6 GSFKW0202 20V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics Figure 3. Gate Charge Figure 4. Normalized On-Resistance Vs. Junction Temperature Figure 5. Drain-Source On-Resistance 3/6 Figure 6. Typical Capacitance vs. Drain-to-Source Voltage GSFKW0202 20V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Firgure 7. Safe Operation Area Firgure 8. Unclamped Inductive Switching Test Circuit & Waveforms Firgure 9. Resistive Switching Test Circuit & Waveforms 4/6 GSFKW0202 20V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Firgure 10. Gate Charge Test Circuit & Waveform 5/6 GSFKW0202 20V N-Channel MOSFET Package Outline Dimensions (SOT-323) Recommended Pad Layout (Unit in MM) www.goodarksemi.com 6/6 Doc.USGSFKW0202XSJ2.0 Jun.2019