GSFL1004

GSFL1004 100V N-Channel MOSFET Main Product Characteristics V(BR)DSS 100V RDS(ON) 185mΩ ID 3A D D D G S G S Schematic Diagram SOT-223 Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The GSFL1004 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 3 A 1.8 A 12 A 1.78 W 0.014 W/°C Drain Current-Continuous(TC=25°C) Drain Current-Continuous(TC=100°C) Drain Current-Pulsed1 Power Dissipation(TC=25°C) Power Dissipation-Derate Above 25°C ID IDM PD Thermal Resistance, Junction-to-Ambient RθJA 70 °C/W Thermal Resistance, Junction-to-Case RθJC 30 °C/W Storage Temperature Range TSTG -50 To +150 °C TJ -50 To +150 °C Operating Junction Temperature Range 1/5 GSFL1004 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 100 - - V - 0.1 - V/°C - - 1 μA - - 10 μA VGS= ±20V, VDS=0V - - ±100 nA VGS= 10V, ID=2A - 160 185 VGS= 4.5V, ID=1A - 170 195 1.2 1.8 2.5 V - -4 - mV/°C - 5 - S - 13.4 21 - 2.9 6 Qgd - 1.7 4 td(on) - 1.6 3 - 6.6 13 - 11.5 22 - 3.6 7 - 820 1190 - 35 55 - 20 30 - 1.3 2.6 Ω - - 3 A - - 6 A - - 1 V Off Characteristics Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current BVDSS △BVDSS/△TJ IDSS IGSS VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS=100V , VGS=0V, TJ=25°C VDS=80V , VGS=0V, TJ=125°C On Characteristics Static Drain-Source OnResistance RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient Forward Transconductance △VGS(th) gFS VDS=VGS, ID=250μA VDS= 10V, ID=1A mΩ Dynamic and Switching Characteristics Total Gate Charge2,3 Gate-Source Charge2,3 Gate-Drain Charge2,3 Turn-On Delay Time2,3 Rise Time2,3 Turn-Off Delay Qg Qgs tr Time2,3 Fall Time2,3 td(off) VDD=30V, RG=3.3Ω VGS=10V, ID=1A tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDS= 50V, ID=2A, VGS=10V Rg VDS= 50V, VGS=0V, F=1MHz VGS= 0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage IS ISM VSD VG=VD=0V, Force Current VGS= 0V, IS=1A, TJ=25°C Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width ≦ 300 uS, duty cycle ≦ 2%. 3. Essentially independent of operating temperature. 2/5 GSFL1004 100V N-Channel MOSFET Normalized On Resistance (mΩ) ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves TC , Case Temperature (°C) TJ , Junction Temperature (°C) Fig.1 Continuous Drain Current vs. TC VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.2 Normalized RDS(ON) vs. TJ Fig.4 Gate Charge Waveform ID, Drain Current (A) ID, Drain Current (A) Qg , Gate Charge (nC) TJ , Junction Temperature (°C) Fig.3 Normalized Vth vs. TJ VDS ,Drain to Source Voltage (V) VGS , Gate to Source Voltage (V) Fig.5 Typical Output Characteristics Fig.6 Transfer Characteristics 3/5 GSFL1004 100V N-Channel MOSFET ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Typical Electrical and Thermal Characteristic Curves VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (S) Fig.7 Normalized Transient Impedance Fig.8 Maximum Safe Operation Area Fig.9 Switching Time Waveform Fig.10 Gate Charge Waveform 4/5 GSFL1004 100V N-Channel MOSFET SOT-223 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.520 1.800 0.060 0.071 A1 0.000 0.100 0.000 0.004 A2 1.500 1.700 0.059 0.067 b 0.660 0.820 0.026 0.032 c 0.250 0.350 0.010 0.014 D 6.200 6.400 0.244 0.252 D1 2.900 3.100 0.114 0.122 E 3.300 3.700 0.130 0.146 E1 6.830 7.070 0.269 0.278 e 2.300 (BSC) 0.091 (BSC) e1 4.500 4.700 0.177 0.185 L 0.900 1.150 0.035 0.045 θ 0° 10° www.goodarksemi.com °0 5/5 10° Doc.USGSFL1004xSP4.0 Aug.2020