GSFT1060

GSFT1060 100V N-Channel MOSFET Main Product Characteristics BVDSS 100V RDS(ON) 18mΩ D D 60A ID G G S S Features and Benefits § Schematic Diagram TO-263 (D PAK) 2 Advanced MOSFET process technology § Ideal for high efficiency switch mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSFT1060 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 60 A 38 A Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) ID Drain Current-Pulsed1 IDM 180 A Single Pulse Avalanche Energy2 EAS 100 mJ Single Pulse Avalanche Current2 IAS 45 A 113 W 0.9 W/°C Power Dissipation (TC=25°C) Power Dissipation-Derate Above 25°C PD Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 1.1 °C/W Storage Temperature Range TSTG -50 To +150 °C TJ -50 To +150 °C Operating Junction Temperature Range 1/5 GSFT1060 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 100 - - V - 0.05 - V/°C - - 1 - - 10 - - ±100 VGS= 10V, ID=25A - 15 18 VGS= 6V, ID=15A - 20 28 VDS=VGS, ID=250μA 2 - 4 V - -5 - mV/°C VDS= 10V, ID=3A - 10 - S - 37.6 70 - 11.7 22 Off Characteristics Drain-Source Breakdown Voltage BVDSS BVDSS Temperature Coefficient △BVDSS /△TJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS= 100V, VGS=0V, TJ=25°C VDS= 80V, VGS=0V, TJ=125°C VGS= ±20V, VDS=0V μA nA On Characteristics Static Drain-Source On-State Resistance RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient Forward Transconductance △VGS(th) gfs mΩ Dynamic and Switching Characteristics Total Gate Charge3,4 Qg Gate-Source Charge3,4 Qgs Gate-Drain Charge3,4 Qgd - 9.8 19 td(on) - 20 40 - 15 30 - 45 80 - 21 40 - 1850 3300 - 160 300 - 85 160 - 1.35 2.6 Ω - - 60 A - - 120 A - - 1 V Turn-On Delay Time3,4 Turn-On Rise Time3,4 Turn-Off Delay Time3,4 Turn-Off Fall Time3,4 tr td(off) VDD=50V, ID=1A VGS=10V,RG=6Ω tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDS= 50V, ID=5A, VGS=10V Rg VDS= 50V, VGS=0V, F=1.0MHz VGS= 0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continous Source Current IS Pulsed Source Current ISM VG=VD=0V, Force Current Diode Forward Voltage VSD VGS= 0V, IS=1A, TJ=25°C Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=45A.,RG=25,Starting TJ=25℃. 3. Pulse test: pulse width ≤ 300us,duty cycle ≤ 2%. 4. Essentially independent of operating temperature. 2/5 GSFT1060 100V N-Channel MOSFET Normalized On Resistance ID, Continous Drain Current (A) Typical Electrical and Thermal Characteristic Curves TJ , Junction Temperature (°C) Figure 1. Continuous Drain Current vs. TC Figure 2. Normalized RDSON vs. TJ Normalized Gate Threshold Voltage VGS , Gate to Source Voltage (V) TC, Case Temperature (°C) TJ , Juction Temperature (°C) Figure 3. Normalized Vth vs. TJ Figure 4. Gate Charge Characteristics Normalized Thermal Response ID, Drain Current (A) Qg , Gate Charge (nC) VDS , Drain to Source Voltage (V) Square Wave Pulsed Duration (s) Figure 5. Normalized Transient Impedance Figure 6. Maximum Safe Operation Area 3/5 GSFT1060 100V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Firgure 7. Switching Time Waveform Firgure 8. Gate Charge Waveform 4/5 GSFT1060 100V N-Channel MOSFET Package Outline Dimensions (TO-263/D2PAK) Unit: mm Order Information Device Package GSFT1060 TO-263 www.goodarksemi.com Marking DH0966A 5/5 Carrier Quantity Tape & Reel 3,000 pcs / Reel Doc.USGSFT1060XSP3.0 Apr.2022