GSFW0501

GSFW0501 50V P-Channel MOSFET D Main Product Characteristics BVDSS -50V RDS(ON) 6Ω (max.) ID -130mA S G G D S SOT-883 Schematic Diagram Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The GSFW0501 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS ±20 V ID -130 mA I DM -520 mA Drain Current-Continuous (TA=25°C) Drain Current-Pulsed4 Power Dissipation (T A =25°C)1 PD Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA Operating Junction Temperature Range Storage Temperature Range 0.15 W 0.0012 W/°C 834 °C/W TJ -55 To +150 °C TSTG -55 To +150 °C 1/4 GSFW0501 50V P-Channel MOSFET Electrical Characteristics (TA=25°C Parameter unless otherwise specified) Symbol Conditions Min. Typ. Max. Unit -50 - - V On/Off Characteristics2 Drain-Source Breakdown Voltage BVDSS VGS=0V, I D=-250μA Drain-Source Leakage Current I DSS VDS=-50V,V GS=0V - - -1 μA Gate-Source Leakage Current I GSS VGS =±20V, V DS=0V - - ±10 uA VGS=-10V, I D=-0.13A - 3.5 6.0 VGS=-5V, ID=-0.1A - 4.0 8.0 -1.0 -1.7 -3.0 - 32 - - 16 - - 4 - - 945 - Static Drain-Source OnResistance 3 RDS(ON) Gate Threshold Voltage VGS(th) VGS =VDS, I D=250μA Ω V Dynamic and Switching Characteristics3 Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-20V, V GS=0V, F=1mHz VGS=0V, VDS=-15mV, F=1mHz Drain-Source Diode Characteristics and Maximum Ratings Gate Resistance Rg Continuous Source Current2 Diode Forward Voltage 2 IS VSD pF Ω TC=25°C - - -0.3 A VGS=0V, I S=-0.26A - -0.8 -1.4 V Note: 1. Surface Mounted on FR4 Board, t ≤ 10 sec . 2. Pulse test: pulse width≤300us,duty cycle ≤2%. 3. Guaranteed by design, not subject to production. 4. Pulsed width limited by maximum junction temperature. 2/4 GSFW0501 50V P-Channel MOSFET RDSon , On-Resistance (Ω) ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves ID , Drain Current (A) Figure 1. Output Characteristics Figure 2. On Resistance vs. ID Normalized Gate Threshold Voltage RDSon , On-Resistance (Ω) VDS , Drain to Source Voltage (V) VGS , Gate to Source Voltage (V) Figure 3. Normalized Vth vs. TJ Figure 4. On Resistance vs. VGS Capacitance (pF) RDSon , On-Resistance (Ω) TJ , Junction Temperature (°C) TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Figure 6. On Resistance vs. TJ Figure 5. Capacitance Characteristics 3/4 GSFW0501 50V P-Channel MOSFET SOT-883 Package Outline Dimensions SOT-883 Dim Min Typ Max A 0.95 1.00 1.075 B 0.47 0.50 0.53 C 0.55 0.60 0.675 D 0.45 0.50 0.55 E/J 0.20 0.25 0.30 F - 0.40 - G - 0.35 - H 0 0.03 0.05 I 0.10 0.15 0.20 Recommended Pad Layout (Unit in mm) www.goodarksemi.com 4/4 Doc.USGSFW0501xSP2.0 Mar.2020