GSJD6505

GSJD6505 650V N-Channel MOSFET Main Product Characteristics VDS 650V RDS(ON) 750mΩ ID 5A D D G G S S Schematic Diagram TO-252 Features and Benefits § Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The GSJD6505 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage, AC (f>1 Hz) VGS ±30 V 5 A 3 A 20 A 46 W 0.37 W/°C Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C) Drain Current-Pulsed1 Power Dissipation (TC=25°C) Power Dissipation-Derate Above25°C ID IDM PD Single Pulse Avalanche Energy2 EAS 52 mJ Avalanche Current1 IAR 0.9 A Repetitive Avalanche Energy ，tAR Limited by Tjmax1 EAR 0.14 mJ Drain Source Voltage Slope, VDS ≤480 V, dv/dt 50 V/nS Reverse Diode dv/dt，VDS ≤480 V, ISD