LL101A thru LL101C
Small-Signal Diode Schottky Diodes
Features
For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available in the DO-35 case with type designations SD101A thru SD101C.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter LL101A LL101B LL101C
Symbol
Value 60 50 40 400
(1)
Unit
Peak inverse voltage Power dissipation (Infinite heatsink)
VRRM Ptot IFSM Tj TS
Volts mW Amps
o
Maximum single cycle surge 10 us square wave Junction temperature Storage temperature range
Notes:
2.0 125 -55 to +150
C C
o
1. Valid provided that electrodes are kept at ambient temperature.
707
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C
Symbol
Test Condition
Min. 60 50 40 -
Typ. -
Max. 200 200 200 0.41 0.4 0.39 1.0 0.95 0.9 2.0 2.1 2.2 1
Unit
Reverse breakdown voltage
V(BR)R
IR=10uA
Volts
Leakage current
IR
VR=50V
nA
IF=1mA VF IF=15mA
Volt
Forward voltage drop
Volt
Junction capacitance Reverse recovery time
Ctot trr
VR=0V, f=1MHz IF=IR=5mA, recover to 0.1IR
pF ns
708
RATINGS AND CHARACTERISTIC CURVES
(TA = 25oC unless otherwise noted)
709
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