LL101C

LL101A thru LL101C Small-Signal Diode Schottky Diodes Features For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available in the DO-35 case with type designations SD101A thru SD101C. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter LL101A LL101B LL101C Symbol Value 60 50 40 400 (1) Unit Peak inverse voltage Power dissipation (Infinite heatsink) VRRM Ptot IFSM Tj TS Volts mW Amps o Maximum single cycle surge 10 us square wave Junction temperature Storage temperature range Notes: 2.0 125 -55 to +150 C C o 1. Valid provided that electrodes are kept at ambient temperature. 707 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C Symbol Test Condition Min. 60 50 40 - Typ. - Max. 200 200 200 0.41 0.4 0.39 1.0 0.95 0.9 2.0 2.1 2.2 1 Unit Reverse breakdown voltage V(BR)R IR=10uA Volts Leakage current IR VR=50V nA IF=1mA VF IF=15mA Volt Forward voltage drop Volt Junction capacitance Reverse recovery time Ctot trr VR=0V, f=1MHz IF=IR=5mA, recover to 0.1IR pF ns 708 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 709