LS4150

LS4150 Fast Switching Diode Features Silicon Epitaxial Planar Diode Electrical data identical with the device 1N4150 Quadro Melf package Applications High speed switch and general purpose use in computer and industrial applications Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation VR = 0 tp= 1 us Test Condition ( Tamb=25oC unless otherwise specified ) Symbol VRRM VR IFSM IF IFAV PV Value 50 50 4 600 300 500 Unit V V A mA mA mW Thermal Characteristics Parameter Junction ambient Junction temperature Stroage temperature range Test Condition on PC board 50 mm X 50mm X 1.6mm ( Tamb=25oC unless otherwise specified ) Symbol RthJA Tj Tstg Value 500 175 -65 to +175 Unit K/W o o C C Electrical Characteristics Parameter Forward voltage IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA Reverse current Diode capacitance Reverse recovery time VR=50V VR=50V, Tj=150oC VR=0, f=1MHz, VHF=50mV IF=IR=10 to 100mA, iR=0.1x IR, RL=100Ω IR CD trr VF Test Condition ( Tamb=25oC unless otherwise specified ) Symbol Min. 0.54 0.66 0.76 0.82 0.87 Typ. Max. 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 Unit V nA pF ns 660 Typical characteristics ( Tamb=25oC unless otherwise specified ) Package Dimensions in mm (inches) 661