LS4151
Fast Switching Diode
Features
Silicon Epitaxial Planar Diode Electrical data identical with the device 1N4151 Quadro Melf package
Applications
Extreme fast switches
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black
Absolute Maximum Ratings
Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation VR=0 tp= 1 us Test Condition
( Tamb=25oC unless otherwise specified )
Symbol VRRM VR IFSM IFRM IF IFAV PV Value 75 50 2 500 300 150 500 Unit V V A mA mA mA mW
Thermal Characteristics
Parameter Junction ambient Junction temperature Stroage temperature range Test Condition on PC board 50 mm X 50mm X 1.6mm
( Tamb=25oC unless otherwise specified )
Symbol RthJA Tj Tstg Value 500 175 -65 to +175 Unit K/W
o o
C C
Electrical Characteristics
Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time IF=50mA VR=50V VR=50V, Tj=150oC IR=5uA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV IF=IR=10mA, iR=1mΑ IF=10mA, VR=6V, iR=0.1x IR, RL=100Ω trr Test Condition VF IR V(BR) CD
( Tamb=25oC unless otherwise specified )
Symbol
Min.
Typ. 0.88
Max. 1.0 50 50
Unit V nA uA V pF ns
75 2 4 2
662
Typical characteristics
( Tamb=25oC unless otherwise specified )
Package Dimensions in mm (inches)
663
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