MCL4154
Fast Switching Diode
Features
Silicon Epitaxial Planar Diodes Electrical data identical with the device 1N4154 Micro Melf package
Applications
Extreme fast switches
Mechanical Data
Case: MicroMELF Glass Case Weight: approx. 12.3 mg Cathode Band Color: Black
Absolute Maximum Ratings
Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation VR=0 tp= 1 us Test Condition
( Tamb=25oC unless otherwise specified )
Symbol VRRM VR IFSM IFRM IF IFAV PV Value 35 25 2 450 200 150 500 Unit V V A mA mA mA mW
Thermal Characteristics
Parameter Junction ambient Test Condition mounted on epoxy-glass hard tissue, Fig 4. 35 um copper clad, 0.9m2 copper area per electrode
( Tamb=25oC unless otherwise specified ) Symbol Value Unit
RthJA Tj Tstg
500
K/W
o o
Junction temperature Stroage temperature range
175 -65 to +175
C C
Electrical Characteristics
Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time IF=30mA VR=25V VR=25V, Tj=150oC IR=5uA, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50mV IF=IR=10mA, iR=1mΑ IF=10mA, VR=6V, iR=0.1x IR, RL=100Ω trr Test Condition VF IR V(BR) CD
( Tamb=25oC unless otherwise specified )
Symbol
Min.
Typ.
Max. 1 100 100
Unit V nA uA V pF ns
35 4 4 2
668
Typical characteristics
( Tamb=25oC unless otherwise specified )
Package Dimensions in mm (inches)
669
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